설명
설명 없음환경 설정
-Wafer size:12inch notch type -Exposing source: KrF(Wavelength 248nm、Cymer ELS-7300) -Laser on another floor -Right side only Console -Surface illumination (standard): 36000[W/㎡]or more -R Type Inline direction -Reduction ratio: 1:4 -Throughput: AGA 8shot 110wafer/hour or more ※Step pitch 26nm×33mm,64 shot (300mm wafers) Exposure amount 300J/m2 -Resolution: 120nm or less -Alignment accuracy: 20nm or less (M+ 3σ) -Lighting NA: Three equipped with Squeezing ①NA:0.80/σ0.80 CONV ②NA:0.80/σ0.40 CONV ③NA:0.80/SiB2 -Projection lens NA: Variable 0.55~0.80 -Exposure range (Scan Field):26×33mm -Wafer alignment: AGA(Off Axis Scope) -Reticle library: Max7sheet -Cool plate before exposure(WTC): None -Options: 6"PPC Unit、6"Reticle Barcode Reader(2D)、Signal Tower(4color、Relay FOUP UnitOEM 모델 설명
The CANON FPA 5000 ES4 scanner is geared for both 200mm and 300mm wafer fabs. This lithography system is suitable for applications at the 100-nm (0.10-micron) and below. The FPA 5000-ES4 has high-throughput rates of 110 wafers per hour (wph) on 300mm and 160wph on 200mm. The s an expansion of Canon's high NA, 248-nm tools for mix-and-match applications문서
문서 없음
CANON
FPA-5000ES4
검증됨
카테고리
193 nm Step and Scan
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
24049
웨이퍼 사이즈:
12"/300mm
빈티지:
2003
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기유사 등재물 없음
CANON
FPA-5000ES4
검증됨
카테고리
193 nm Step and Scan
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
24049
웨이퍼 사이즈:
12"/300mm
빈티지:
2003
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
-Wafer size:12inch notch type -Exposing source: KrF(Wavelength 248nm、Cymer ELS-7300) -Laser on another floor -Right side only Console -Surface illumination (standard): 36000[W/㎡]or more -R Type Inline direction -Reduction ratio: 1:4 -Throughput: AGA 8shot 110wafer/hour or more ※Step pitch 26nm×33mm,64 shot (300mm wafers) Exposure amount 300J/m2 -Resolution: 120nm or less -Alignment accuracy: 20nm or less (M+ 3σ) -Lighting NA: Three equipped with Squeezing ①NA:0.80/σ0.80 CONV ②NA:0.80/σ0.40 CONV ③NA:0.80/SiB2 -Projection lens NA: Variable 0.55~0.80 -Exposure range (Scan Field):26×33mm -Wafer alignment: AGA(Off Axis Scope) -Reticle library: Max7sheet -Cool plate before exposure(WTC): None -Options: 6"PPC Unit、6"Reticle Barcode Reader(2D)、Signal Tower(4color、Relay FOUP UnitOEM 모델 설명
The CANON FPA 5000 ES4 scanner is geared for both 200mm and 300mm wafer fabs. This lithography system is suitable for applications at the 100-nm (0.10-micron) and below. The FPA 5000-ES4 has high-throughput rates of 110 wafers per hour (wph) on 300mm and 160wph on 200mm. The s an expansion of Canon's high NA, 248-nm tools for mix-and-match applications문서
문서 없음
유사 등재물
모두 보기유사 등재물 없음