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설명
설명 없음환경 설정
Including: Clamp、MarkⅡ Chamber *2 endpoint & mini controller EBARA abatement system*2 EBARA Multi-stage dry pump Chiller: SCS 2WHA Gas box Missing parts: TC gauge, RF GeneratorOEM 모델 설명
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.문서
문서 없음
APPLIED MATERIALS (AMAT)
P5000 ETCH
검증됨
카테고리
Etch/Asher
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
75274
웨이퍼 사이즈:
6"/150mm
빈티지:
1995
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기APPLIED MATERIALS (AMAT)
P5000 ETCH
카테고리
Etch/Asher
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
75274
웨이퍼 사이즈:
6"/150mm
빈티지:
1995
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
Including: Clamp、MarkⅡ Chamber *2 endpoint & mini controller EBARA abatement system*2 EBARA Multi-stage dry pump Chiller: SCS 2WHA Gas box Missing parts: TC gauge, RF GeneratorOEM 모델 설명
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.문서
문서 없음