설명
설명 없음환경 설정
Details attached.OEM 모델 설명
The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.문서
APPLIED MATERIALS (AMAT)
xR80 LEAP II
검증됨
카테고리
High Current
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
30491
웨이퍼 사이즈:
8"/200mm
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기유사 등재물 없음
APPLIED MATERIALS (AMAT)
xR80 LEAP II
검증됨
카테고리
High Current
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
30491
웨이퍼 사이즈:
8"/200mm
빈티지:
알 수 없음
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
Details attached.OEM 모델 설명
The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.문서
유사 등재물
모두 보기유사 등재물 없음