설명

Dual endstation Installed

환경 설정

-Implanter: Dual end-stations setup for 6" wafers -Implant angle: 0 – 7 degrees -Source type: Freeman ion source -Scan Amp: Brookhaven X and Y Scan master amplifiers. -Beam energy probe: 0 -200 KV beam energy probe. -Beam monitor: Remote beam monitor on control console. -Extraction: Variable (0 – 35) KV -Platen: Standard 300XP grounded platen on ES#1 & 2. Corner cup integration -Source rough pump: Alcatel 2012, 3 phase. -B/L Rough pump: Alcatel 2012/2008, single phase -E/S Rough pump: Alcatel 2012/2008, single phase -LOAD LOCK pump: Alcatel 2012/2008, single phase -Source Hi-Vac pump: Varian VHS 4 diffusion pump -VARIAN B/L Hi-Vac pump with CTI-8 Cryo pump -VARIAN E/S Hi-Vac pump with CTI-8 Cryo pump -CTI Compressors. -Accel / Decel power supply kit: standard (-2KV) -AMU: 0 – 124 amu -Ion beam filter: N/A but compatible. -Process control terminal: 486 with remote control console. -XP scan controller Dosimetry system. Gas system: 4 gas system (3 MFC, 1 HP for boron) SDS gas control system. Fiber optic control interface between high voltage terminal and ground level controls. Refurbished

OEM 모델 설명

The 300 XP evolved from the industry-standard Varian 350D medium current implanter, which was the tool of choice during the early 1980's. The 300 XP was introduced in 1986 with process recipe control that assured error-free setups, independent dual end stations with increased reliability and throughput, and improved dosimetry.