설명
Lithography Lithography Machine환경 설정
환경 설정 없음OEM 모델 설명
The Canon MPA-600 FA is a one-to-one projection aligner for 6" wafers. It uses a high intensity Mercury lamp to expose the wafer through a mask plate and a series of mirrors. The wafer scans horizontally through an arc of light at a specified scan speed to expose the light-sensitive positive photoresist that was coated onto the wafer. The Canon MPA-600 FA has a wafer size of 5 or 6 inches and a mask size of 6 or 7 inches square. It uses a projection mirror with a magnification of 1X and an illuminator that is a 2kW super high pressure mercury lamp. The exposure wavelengths used are 365 nm (i-line), 405 nm (h-line), and 436 nm (g-line). The resolution is 2.5 um over the entire 6 inch surface and the depth of focus is more than +/- 6 um at linewidth 1.5 um. The alignment accuracy is 3 sigma, < or = 0.6 um.문서
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CANON
MPA 600
검증됨
카테고리
Mask/Bond Aligners
마지막 검증일: 14일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
115651
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
CANON
MPA 600
카테고리
Mask/Bond Aligners
마지막 검증일: 14일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
115651
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
Lithography Lithography Machine환경 설정
환경 설정 없음OEM 모델 설명
The Canon MPA-600 FA is a one-to-one projection aligner for 6" wafers. It uses a high intensity Mercury lamp to expose the wafer through a mask plate and a series of mirrors. The wafer scans horizontally through an arc of light at a specified scan speed to expose the light-sensitive positive photoresist that was coated onto the wafer. The Canon MPA-600 FA has a wafer size of 5 or 6 inches and a mask size of 6 or 7 inches square. It uses a projection mirror with a magnification of 1X and an illuminator that is a 2kW super high pressure mercury lamp. The exposure wavelengths used are 365 nm (i-line), 405 nm (h-line), and 436 nm (g-line). The resolution is 2.5 um over the entire 6 inch surface and the depth of focus is more than +/- 6 um at linewidth 1.5 um. The alignment accuracy is 3 sigma, < or = 0.6 um.문서
문서 없음