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The AXCELIS NV 10-160 is a high-energy ion implanter, specifically designed for implanting ions into bare silicon wafers. It operates at 60 keV energy, and its implantation process allows for precise dosing in the range of 1 to 5∙10^15 ions per square centimeter. After implantation, the wafers can be annealed at 600°C for 20 minutes to activate and optimize the implanted ions' performance. The AXCELIS NV 10-160 is a powerful tool used in semiconductor manufacturing for creating controlled doping profiles and modifying material properties in silicon wafers, essential for producing advanced semiconductor devices.