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설명
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Veeco Propel spare parts: -Vincent furnace - Type HBM-650G -Scrubber, GNBS Engineering - Model NSGB 1.32 -Process pump - EBARA ESA25XW -Loadlock pump - EBARA EV-S20P -Big heater - tbd -Transformer Eaton. D 380-22.8A / Y 208-120 -Metal particle filters (3x). -Bubbler chillers. SMC INR-244-753 (3x) -Chiller. SMC, type HRB4009Z-X009 -Carrier (graphite, 6”). 1269329-5160-87, ± 20x -Seals, Part 1120076, 5x -Spindle, Quartz, Part 1236247, x2 -Susceptors, 150mm x10 -TPL Quartz crucible, 14X9.5-AS, + lab consumables -Platen 6”, 2013977-02, x3 -Carriers, 200 mm, new, Part 1254998-501300, x20. OEM newOEM 모델 설명
Veeco’s Propel™ MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2”, 3×4”, 1×6” and 1×8” on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.The system deposits high-quality GaN films for multiple applications such as power, RF, & photonics. The R200 reactor is based on Veeco’s leading TurboDisc® design including the IsoFlange™ and SymmHeat™ technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco D180, K465i™ or MaxBright™ systems to the Propel GaN MOCVD platform.문서
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VEECO
Propel
카테고리
MOCVD
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Parts Tool
작동 상태:
알 수 없음
제품 ID:
102262
웨이퍼 사이즈:
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빈티지:
알 수 없음
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설명
설명 없음환경 설정
Veeco Propel spare parts: -Vincent furnace - Type HBM-650G -Scrubber, GNBS Engineering - Model NSGB 1.32 -Process pump - EBARA ESA25XW -Loadlock pump - EBARA EV-S20P -Big heater - tbd -Transformer Eaton. D 380-22.8A / Y 208-120 -Metal particle filters (3x). -Bubbler chillers. SMC INR-244-753 (3x) -Chiller. SMC, type HRB4009Z-X009 -Carrier (graphite, 6”). 1269329-5160-87, ± 20x -Seals, Part 1120076, 5x -Spindle, Quartz, Part 1236247, x2 -Susceptors, 150mm x10 -TPL Quartz crucible, 14X9.5-AS, + lab consumables -Platen 6”, 2013977-02, x3 -Carriers, 200 mm, new, Part 1254998-501300, x20. OEM newOEM 모델 설명
Veeco’s Propel™ MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2”, 3×4”, 1×6” and 1×8” on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.The system deposits high-quality GaN films for multiple applications such as power, RF, & photonics. The R200 reactor is based on Veeco’s leading TurboDisc® design including the IsoFlange™ and SymmHeat™ technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco D180, K465i™ or MaxBright™ systems to the Propel GaN MOCVD platform.문서
문서 없음