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APPLIED MATERIALS (AMAT) PRODUCER GT PECVD
    설명
    PECVD (Chemical Vapor Deposition)
    환경 설정
    환경 설정 없음
    OEM 모델 설명
    Applied Materials offers PECVD (Plasma-Enhanced Chemical Vapor Deposition) TEOS (tetraethyl orthosilicate) and silane-based oxide and nitride films for high-productivity blanket film applications for ≤90nm technology nodes. These films deliver excellent thickness uniformity, low particulates, and repeatable film stress which make them ideal solutions for liner and capping layers for passivation, thick pre-metal dielectric (PMD) capacitor layer, and inter-metal dielectric (IMD) applications. For 130nm and 90nm copper dual damascene schemes, the Producer PECVD system offers production-proven TEOS FSG (fluorinated silicate glass) as the low k dielectric (k=3.45) and Damascene Nitride as the etch-stop and copper barrier layer. Damascene Nitride provides a unique in-situ copper removal step to ensure excellent adhesion and improved device reliability. High etch selectivity to FSG and low hydrogen content make this film ideal as an etch-stop layer. The TEOS FSG film, which is deposited on top of Damascene Nitride, provides significantly higher device reliability and performance compared to silane-based FSG films due to its inherent fluorine stability and moisture resistance. The 3.45 k-value reduces capacitance versus USG (undoped silicate glass) and silane FSG films, thereby increasing device speed and lowering power consumption for devices. These PECVD processes run on the production-proven, high-throughput Applied Producer platform. With its innovative Twin Chamber architecture, the Producer platform enables simultaneous processing of up to six wafers for superior productivity and significant reduction in cost of ownership with high system reliability. Platform extendibility enables customers to leverage the Producer toolset for multiple process nodes.
    문서

    문서 없음

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

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    검증됨

    카테고리
    PECVD

    마지막 검증일: 19일 전

    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    97540


    웨이퍼 사이즈:

    12"/300mm


    빈티지:

    알 수 없음


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVD
    빈티지: 2009조건: 중고
    마지막 검증일60일 이상 전

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    verified-listing-icon
    검증됨
    카테고리
    PECVD
    마지막 검증일: 19일 전
    listing-photo-84dd81c9b439437a8a45f69ea1c813dd-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    97540


    웨이퍼 사이즈:

    12"/300mm


    빈티지:

    알 수 없음


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    PECVD (Chemical Vapor Deposition)
    환경 설정
    환경 설정 없음
    OEM 모델 설명
    Applied Materials offers PECVD (Plasma-Enhanced Chemical Vapor Deposition) TEOS (tetraethyl orthosilicate) and silane-based oxide and nitride films for high-productivity blanket film applications for ≤90nm technology nodes. These films deliver excellent thickness uniformity, low particulates, and repeatable film stress which make them ideal solutions for liner and capping layers for passivation, thick pre-metal dielectric (PMD) capacitor layer, and inter-metal dielectric (IMD) applications. For 130nm and 90nm copper dual damascene schemes, the Producer PECVD system offers production-proven TEOS FSG (fluorinated silicate glass) as the low k dielectric (k=3.45) and Damascene Nitride as the etch-stop and copper barrier layer. Damascene Nitride provides a unique in-situ copper removal step to ensure excellent adhesion and improved device reliability. High etch selectivity to FSG and low hydrogen content make this film ideal as an etch-stop layer. The TEOS FSG film, which is deposited on top of Damascene Nitride, provides significantly higher device reliability and performance compared to silane-based FSG films due to its inherent fluorine stability and moisture resistance. The 3.45 k-value reduces capacitance versus USG (undoped silicate glass) and silane FSG films, thereby increasing device speed and lowering power consumption for devices. These PECVD processes run on the production-proven, high-throughput Applied Producer platform. With its innovative Twin Chamber architecture, the Producer platform enables simultaneous processing of up to six wafers for superior productivity and significant reduction in cost of ownership with high system reliability. Platform extendibility enables customers to leverage the Producer toolset for multiple process nodes.
    문서

    문서 없음

    유사 등재물
    모두 보기
    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVD빈티지: 2009조건: 중고마지막 검증일:60일 이상 전
    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVD빈티지: 0조건: 중고마지막 검증일:19일 전