설명
-Recently de-installed, but not operational (there is a wafer transport issue) -Full gas cabinet included환경 설정
Oxford Plasmalab 100 PECVD: -Configured for 200mm wafers, with Al carrier for multiple substrate sizes, down to small pieces -Used for deposition of SiO2 and Si3N4 -Optional low-frequency power supply (configured with dual-frequency RF) -Heated stage; Routinely ran at 370 degrees -MFCs for 7 gases - Ar, CF4/O2, SiH4, N2O, CH4, PH3/TMP, and B2H6/TMBOEM 모델 설명
The Oxford Plasmalab 100 is an inductively coupled plasma (ICP) etcher that is designed for multipurpose use. It is based on fluorocarbon and is capable of anisotropically etching silicon, silicon oxide, and other dielectric materials. The tool is equipped with a temperature-controlled electrode, which allows users to tailor their etch feature profiles. The manual load system can accommodate substrates of various sizes, ranging from 200mm diameter wafers down to small pieces문서
문서 없음
카테고리
PECVD
마지막 검증일: 28일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
106186
웨이퍼 사이즈:
4"/100mm, 5"/125mm, 6"/150mm, 8"/200mm
빈티지:
2001
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
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OXFORD
PLASMALAB 100 PECVD
카테고리
PECVD
마지막 검증일: 28일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
106186
웨이퍼 사이즈:
4"/100mm, 5"/125mm, 6"/150mm, 8"/200mm
빈티지:
2001
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
-Recently de-installed, but not operational (there is a wafer transport issue) -Full gas cabinet included환경 설정
Oxford Plasmalab 100 PECVD: -Configured for 200mm wafers, with Al carrier for multiple substrate sizes, down to small pieces -Used for deposition of SiO2 and Si3N4 -Optional low-frequency power supply (configured with dual-frequency RF) -Heated stage; Routinely ran at 370 degrees -MFCs for 7 gases - Ar, CF4/O2, SiH4, N2O, CH4, PH3/TMP, and B2H6/TMBOEM 모델 설명
The Oxford Plasmalab 100 is an inductively coupled plasma (ICP) etcher that is designed for multipurpose use. It is based on fluorocarbon and is capable of anisotropically etching silicon, silicon oxide, and other dielectric materials. The tool is equipped with a temperature-controlled electrode, which allows users to tailor their etch feature profiles. The manual load system can accommodate substrates of various sizes, ranging from 200mm diameter wafers down to small pieces문서
문서 없음