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CELLO AEGIS-60
    설명
    Used. Just taken offline in 2021/07 and not able to run the equipment now. If there are any questions or you need more info, please contact us.
    환경 설정
    1. Chamber: Aluminum, 600(ID) x 138(H)mm, chamber lid opening/closing by manual 2. Electrode: Parallel plate, cathode coupling electrodes 3. Substrate Heating: Resistive heater, Max. 400℃, PID controlled 4. Substrate Holder: 5 x Φ6", Aluminum carrier. (or 13 x 4" wafer) 5. RF Power: AE Cesar, 13.56MHz, Max. 1,000W, all solid state. 6. Gas Inlet Lines: 2 Mass Flow Controllers with metal sealed and bypass lines for 10%-(SiH4 / N2) and NH3. 4 Mass Flow Controllers for N2O, N2, CF4 and O2.
    OEM 모델 설명
    미제공
    문서

    문서 없음

    CELLO

    AEGIS-60

    verified-listing-icon

    검증됨

    카테고리
    Photolithography

    마지막 검증일: 60일 이상 전

    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    47750


    웨이퍼 사이즈:

    알 수 없음


    빈티지:

    2014

    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기

    유사 등재물 없음

    CELLO

    AEGIS-60

    verified-listing-icon
    검증됨
    카테고리
    Photolithography
    마지막 검증일: 60일 이상 전
    listing-photo-11c6779f57704c7895fa8fed3f27a146-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    47750


    웨이퍼 사이즈:

    알 수 없음


    빈티지:

    2014


    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    Used. Just taken offline in 2021/07 and not able to run the equipment now. If there are any questions or you need more info, please contact us.
    환경 설정
    1. Chamber: Aluminum, 600(ID) x 138(H)mm, chamber lid opening/closing by manual 2. Electrode: Parallel plate, cathode coupling electrodes 3. Substrate Heating: Resistive heater, Max. 400℃, PID controlled 4. Substrate Holder: 5 x Φ6", Aluminum carrier. (or 13 x 4" wafer) 5. RF Power: AE Cesar, 13.56MHz, Max. 1,000W, all solid state. 6. Gas Inlet Lines: 2 Mass Flow Controllers with metal sealed and bypass lines for 10%-(SiH4 / N2) and NH3. 4 Mass Flow Controllers for N2O, N2, CF4 and O2.
    OEM 모델 설명
    미제공
    문서

    문서 없음

    유사 등재물
    모두 보기

    유사 등재물 없음