Reliable and complete filling of interconnect trench and via structures with copper is vital for device reliability in microelectronic fabrication. Essential steps in this process are the depositing of a barrier (to prevent copper diffusion into the surrounding insulating material) and a copper seed layer that facilitates subsequent electrochemical deposition (or plating) without voids or seams.

Applied Materials is committed to accelerating this new PPACt playbook for our customers and partners. We have the broadest and deepest portfolio of products for delivering PPACt innovations to the market. This portfolio encompasses the ability to create and deposit, shape and remove, modify, analyze, and connect materials and devices in new ways. We are unique in having a broad suite of process technology and metrology capabilities under one roof, and we have highly differentiated silicon and packaging lab capabilities. Our Integrated Materials Solutions co-optimize materials deposition, removal, modification, and analysis to create new materials and engineer new structures for high-performance, low-power chips at leading-edge nodes.

ENDURA AMBER PVD

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