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LAM RESEARCH / NOVELLUS INOVA NExT
    설명
    TFM_TiN-HM Dep
    환경 설정
    TFM_TiN-HM Dep
    OEM 모델 설명
    The INOVA NExT, a 300mm metallization system designed to deposit highly conformal copper barrier-seed films at 45 nanometers and beyond. On the INOVA NExT, the single target HCM technology has been extended to the 45 nanometer node; the system also features an integrated ion-induced atomic layer deposition (iALD) module to deposit tantalum nitride (TaN) barrier films below 45 nanometers.
    문서

    문서 없음

    LAM RESEARCH / NOVELLUS

    INOVA NExT

    verified-listing-icon

    검증됨

    카테고리
    PVD / Sputtering

    마지막 검증일: 60일 이상 전

    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    49104


    웨이퍼 사이즈:

    12"/300mm


    빈티지:

    2013


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    LAM RESEARCH / NOVELLUS INOVA NExT

    LAM RESEARCH / NOVELLUS

    INOVA NExT

    PVD / Sputtering
    빈티지: 2013조건: 중고
    마지막 검증일60일 이상 전

    LAM RESEARCH / NOVELLUS

    INOVA NExT

    verified-listing-icon
    검증됨
    카테고리
    PVD / Sputtering
    마지막 검증일: 60일 이상 전
    listing-photo-2afbb2dc40a848f3825daed5f69a6e92-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    49104


    웨이퍼 사이즈:

    12"/300mm


    빈티지:

    2013


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    TFM_TiN-HM Dep
    환경 설정
    TFM_TiN-HM Dep
    OEM 모델 설명
    The INOVA NExT, a 300mm metallization system designed to deposit highly conformal copper barrier-seed films at 45 nanometers and beyond. On the INOVA NExT, the single target HCM technology has been extended to the 45 nanometer node; the system also features an integrated ion-induced atomic layer deposition (iALD) module to deposit tantalum nitride (TaN) barrier films below 45 nanometers.
    문서

    문서 없음

    유사 등재물
    모두 보기
    LAM RESEARCH / NOVELLUS INOVA NExT

    LAM RESEARCH / NOVELLUS

    INOVA NExT

    PVD / Sputtering빈티지: 2013조건: 중고마지막 검증일:60일 이상 전
    LAM RESEARCH / NOVELLUS INOVA NExT

    LAM RESEARCH / NOVELLUS

    INOVA NExT

    PVD / Sputtering빈티지: 2013조건: 중고마지막 검증일:60일 이상 전
    LAM RESEARCH / NOVELLUS INOVA NExT

    LAM RESEARCH / NOVELLUS

    INOVA NExT

    PVD / Sputtering빈티지: 2013조건: 중고마지막 검증일:60일 이상 전