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The AIXTRON G3 is a commercial MOCVD (Metal-Organic Chemical Vapor Deposition) system featuring a planetary cold-wall reactor design. This system exhibits an abrupt temperature gradient near the substrate, with the highest temperature at the substrate and a rapid decrease along the surface normal direction. This controlled temperature profile ensures precise and efficient epitaxial growth of compound semiconductor materials, making it suitable for various applications, including the production of optoelectronic devices like LEDs and laser diodes.
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