설명
There are some missing parts that cannot be used normally. Missing Parts: PM1: MMC qty 1 PM2: MMC qty 1 PM1: Ring Tilt Mechanism Lift Unit qty 1 PM2: Ring Tilt Mechanism Lift Unit qty 1환경 설정
Rapid Thermal Processing Device After verifying with on-site personnel, it was confirmed that "the quartz inside the chamber is still intact and usable during the shutdownOEM 모델 설명
Helios family RTP systems offer unique double-side heating RTP technology. It can achieve the highest wafer temperature ramp rate while balancing wafer frontside and backside temperatures, eliminate pattern-loading effect, provide unique wafer stress management capabilities, satisfy technical requirements for RTP processes with different substrate thickness and device structures, and achieve the highest system productivity at the same time.문서
문서 없음
MATTSON
HELIOS
검증됨
카테고리
RTP/RTA
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
75593
웨이퍼 사이즈:
12"/300mm
빈티지:
2008
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
MATTSON
HELIOS
카테고리
RTP/RTA
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
75593
웨이퍼 사이즈:
12"/300mm
빈티지:
2008
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
There are some missing parts that cannot be used normally. Missing Parts: PM1: MMC qty 1 PM2: MMC qty 1 PM1: Ring Tilt Mechanism Lift Unit qty 1 PM2: Ring Tilt Mechanism Lift Unit qty 1환경 설정
Rapid Thermal Processing Device After verifying with on-site personnel, it was confirmed that "the quartz inside the chamber is still intact and usable during the shutdownOEM 모델 설명
Helios family RTP systems offer unique double-side heating RTP technology. It can achieve the highest wafer temperature ramp rate while balancing wafer frontside and backside temperatures, eliminate pattern-loading effect, provide unique wafer stress management capabilities, satisfy technical requirements for RTP processes with different substrate thickness and device structures, and achieve the highest system productivity at the same time.문서
문서 없음