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Missing Parts: PM1: Board IGBT CB 40A FUSES qty 10 PM2: DOOR MECHANICS HELIOS qty 1 PM1: MMC qty 1 PM2: MMC qty 1 PM1: O2 sensor qty 1 PM2: O2 sensor qty 1 PM1: Rotation controller qty 1 PM2: Rotation controller qty 1 FI: Robot controller, CURR, RR717 qty 1 PM1: Pyro chiller qty 1 PM1: Ring Tilt Mechanism Lift Unit qty 1 PM2: Ring Tilt Mechanism Lift Unit qty 1 FI: RD cable qty 1 FI: Sequencer qty 1환경 설정
Rapid Thermal Processing Device After verifying with on-site personnel, it was confirmed that "the quartz inside the chamber is still intact and usable during shutdown.OEM 모델 설명
Helios family RTP systems offer unique double-side heating RTP technology. It can achieve the highest wafer temperature ramp rate while balancing wafer frontside and backside temperatures, eliminate pattern-loading effect, provide unique wafer stress management capabilities, satisfy technical requirements for RTP processes with different substrate thickness and device structures, and achieve the highest system productivity at the same time.문서
문서 없음
유사 등재물
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MATTSON
HELIOS
카테고리
RTP/RTA
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
85012
웨이퍼 사이즈:
12"/300mm
빈티지:
2008
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설명
Missing Parts: PM1: Board IGBT CB 40A FUSES qty 10 PM2: DOOR MECHANICS HELIOS qty 1 PM1: MMC qty 1 PM2: MMC qty 1 PM1: O2 sensor qty 1 PM2: O2 sensor qty 1 PM1: Rotation controller qty 1 PM2: Rotation controller qty 1 FI: Robot controller, CURR, RR717 qty 1 PM1: Pyro chiller qty 1 PM1: Ring Tilt Mechanism Lift Unit qty 1 PM2: Ring Tilt Mechanism Lift Unit qty 1 FI: RD cable qty 1 FI: Sequencer qty 1환경 설정
Rapid Thermal Processing Device After verifying with on-site personnel, it was confirmed that "the quartz inside the chamber is still intact and usable during shutdown.OEM 모델 설명
Helios family RTP systems offer unique double-side heating RTP technology. It can achieve the highest wafer temperature ramp rate while balancing wafer frontside and backside temperatures, eliminate pattern-loading effect, provide unique wafer stress management capabilities, satisfy technical requirements for RTP processes with different substrate thickness and device structures, and achieve the highest system productivity at the same time.문서
문서 없음