설명
설명 없음환경 설정
HfO2 deposition: − Temperature: 320 ºC − Pressure: 0.5 Torr − Precursor: TEMAH (Tetrakisethymethyllaminohafnium) − Precursor carrier gas: Ar − Process purge gas: Ar − HfO2 reaction: TEMAH half-reaction + O3 half-reaction Al2O3 deposition: − Temperature: 250 ºC − Pressure: 0.5 Torr − Precursor: TMA (Trimethylaluminum) − Precursor carrier gas: Ar − Process purge gas: Ar − Al2O3 reaction: TMA half-reaction + O3 half-reaction TiN deposition: − Temperature: 470 ºC − Pressure: 0.8 Torr − Precursor: TiCl4 (Titanium tetrachloride) − Precursor carrier gas: Ar − Process purge gas: Ar − TiN reaction: TiCl4 half-reaction + NH3 half-reactionOEM 모델 설명
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AIXTRON / GENUS
StrataGem 200
검증됨
카테고리
ALD
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
Installed / Running
제품 ID:
104535
웨이퍼 사이즈:
8"/200mm
빈티지:
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AIXTRON / GENUS
StrataGem 200
카테고리
ALD
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
Installed / Running
제품 ID:
104535
웨이퍼 사이즈:
8"/200mm
빈티지:
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
HfO2 deposition: − Temperature: 320 ºC − Pressure: 0.5 Torr − Precursor: TEMAH (Tetrakisethymethyllaminohafnium) − Precursor carrier gas: Ar − Process purge gas: Ar − HfO2 reaction: TEMAH half-reaction + O3 half-reaction Al2O3 deposition: − Temperature: 250 ºC − Pressure: 0.5 Torr − Precursor: TMA (Trimethylaluminum) − Precursor carrier gas: Ar − Process purge gas: Ar − Al2O3 reaction: TMA half-reaction + O3 half-reaction TiN deposition: − Temperature: 470 ºC − Pressure: 0.8 Torr − Precursor: TiCl4 (Titanium tetrachloride) − Precursor carrier gas: Ar − Process purge gas: Ar − TiN reaction: TiCl4 half-reaction + NH3 half-reactionOEM 모델 설명
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문서 없음