설명

Thermal ALD and plasma-enhanced ALD Details Attached

환경 설정

Thermal ALD and plasma-enhanced ALD Two-module configuration: P300F PRO Thermal ALD + P200S PRO PEALD Automated cassette-to-cassette handling Brooks MX-700 Robot SECS/GEM factory integration 1 - Thermal - P300F PRO Thermal ALD; P300F reaction chamber; 6 inch wafer holder 1 - Plasma Enhanced - P200S PRO PEALD; RC-200 heated sample stage; 6 inch heated chuck Plasma Source - Advanced Energy Litmas, 3 kW ICP on P200S module Liquid Precursor Delivery - Picosolution 600 systems Heated Precursor Delivery - Picohot heated source systems Gas Delivery - PicoGas / PicoPlasma gas delivery for process and purge gases Ozone - Picozone 200 delivery system associated with P300F thermal ALD Process modules - Two-module configuration: P300F PRO Thermal ALD + P200S PRO PEALD Substrates - GaAs, Si, and SiC Wafer Handling - Automated cassette-to-cassette handling Robot - Brooks MX-700 Automation - SECS/GEM factory integration Process capability - Thermal ALD and plasma-enhanced ALD Electrical - 208 V, 3 phase; 50/60 Hz (historical specification) Nitrogen - Minimum 2 slm for ALD unit; 99.999% minimum purity; 1-2 bar specified in historical utility document Compressed Dry Air - 4-5.5 bar for ALD unit Cooling - Cooling water and nitrogen associated with dry-pump operation Ambient - 19-25 C suggested; 35-65% RH in historical specification Exhaust / Vacuum - Pump line and exhaust line required