설명
ALD (Atomic Layer Deposition)환경 설정
환경 설정 없음OEM 모델 설명
NT333™ has large wafer capacity as compared to single or dual wafer processing techniques. With the added capability of pre or post treatment steps included in each ALD cycle, NT333™ is capable of forming films of the highest quality while operating at low temperatures and providing tunable film stresses for a variety of applications. Additionally, NT333™ has unique plasma shield which mitigates plasma damage resulting in high quality films while maintain high stage rotation speeds.문서
문서 없음
TEL / TOKYO ELECTRON
NT333
검증됨
카테고리
ALD
마지막 검증일: 20일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
113749
웨이퍼 사이즈:
12"/300mm
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
TEL / TOKYO ELECTRON
NT333
카테고리
ALD
마지막 검증일: 20일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
113749
웨이퍼 사이즈:
12"/300mm
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
ALD (Atomic Layer Deposition)환경 설정
환경 설정 없음OEM 모델 설명
NT333™ has large wafer capacity as compared to single or dual wafer processing techniques. With the added capability of pre or post treatment steps included in each ALD cycle, NT333™ is capable of forming films of the highest quality while operating at low temperatures and providing tunable film stresses for a variety of applications. Additionally, NT333™ has unique plasma shield which mitigates plasma damage resulting in high quality films while maintain high stage rotation speeds.문서
문서 없음