설명
Atmospheric Depo LD: 3ea, no modification, CVD환경 설정
Atmospheric Depo LD: 3ea, no modification (Chamber) Atmospheric CVD (process) SiH4, O2, HF (Gas) DOS (Operating system) -PROGRESS TYPE: DCVD -CHAMBER POSITION: SINGLE BODY -DAIHEN Controller : Model CS-8600 PN XE4070 -MANIPULATOR Controller : MECS UTC800F -MONITOR Rack : SK907354-001 RA -Model Configuration : UTC-R800PX-XV0034OEM 모델 설명
The Watkins Johnson (WJ) WJ-999R is an advanced and versatile system designed for chemical vapor deposition (APCVD) applications in semiconductor production lines using 100mm to 150mm wafers. It has the capability to process two wafers simultaneously in parallel, optimizing throughput. The system offers the flexibility to handle both doped and un-doped silicon dioxide processing, making it suitable for a wide range of semiconductor manufacturing requirements.문서
문서 없음
AVIZA / WATKINS-JOHNSON
WJ-999R
검증됨
카테고리
CVD
마지막 검증일: 3일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
Deinstalled
제품 ID:
105238
웨이퍼 사이즈:
8"/200mm
빈티지:
1998
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AVIZA / WATKINS-JOHNSON
WJ-999R
카테고리
CVD
마지막 검증일: 3일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
Deinstalled
제품 ID:
105238
웨이퍼 사이즈:
8"/200mm
빈티지:
1998
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
Atmospheric Depo LD: 3ea, no modification, CVD환경 설정
Atmospheric Depo LD: 3ea, no modification (Chamber) Atmospheric CVD (process) SiH4, O2, HF (Gas) DOS (Operating system) -PROGRESS TYPE: DCVD -CHAMBER POSITION: SINGLE BODY -DAIHEN Controller : Model CS-8600 PN XE4070 -MANIPULATOR Controller : MECS UTC800F -MONITOR Rack : SK907354-001 RA -Model Configuration : UTC-R800PX-XV0034OEM 모델 설명
The Watkins Johnson (WJ) WJ-999R is an advanced and versatile system designed for chemical vapor deposition (APCVD) applications in semiconductor production lines using 100mm to 150mm wafers. It has the capability to process two wafers simultaneously in parallel, optimizing throughput. The system offers the flexibility to handle both doped and un-doped silicon dioxide processing, making it suitable for a wide range of semiconductor manufacturing requirements.문서
문서 없음