설명
WCVD (Chemical Vapor Deposition)환경 설정
환경 설정 없음OEM 모델 설명
ALTUS Max ICEFill is a product from Lam’s ALTUS family of systems that combines Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) technologies to deposit highly conformal films for advanced tungsten metallization applications. It addresses industry challenges such as minimizing contact resistance and enabling complete, defect-free tungsten fill for nanoscale structures. The product offers benefits such as lower overall resistivity of thin W films, low-fluorine and low-stress W fill for advanced 3D NAND and DRAM, and high step coverage with reduced thickness films by using ALD in the deposition of WN films. It is used for key applications such as tungsten plug and via fill, 3D NAND wordlines, low-stress composite interconnects, and WN barrier for via and contact metallization.문서
문서 없음
카테고리
CVD
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
135689
웨이퍼 사이즈:
12"/300mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
LAM RESEARCH / NOVELLUS
ALTUS MAX ICEFill
카테고리
CVD
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
135689
웨이퍼 사이즈:
12"/300mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
WCVD (Chemical Vapor Deposition)환경 설정
환경 설정 없음OEM 모델 설명
ALTUS Max ICEFill is a product from Lam’s ALTUS family of systems that combines Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) technologies to deposit highly conformal films for advanced tungsten metallization applications. It addresses industry challenges such as minimizing contact resistance and enabling complete, defect-free tungsten fill for nanoscale structures. The product offers benefits such as lower overall resistivity of thin W films, low-fluorine and low-stress W fill for advanced 3D NAND and DRAM, and high step coverage with reduced thickness films by using ALD in the deposition of WN films. It is used for key applications such as tungsten plug and via fill, 3D NAND wordlines, low-stress composite interconnects, and WN barrier for via and contact metallization.문서
문서 없음