설명
IQC환경 설정
환경 설정 없음OEM 모델 설명
Using deep ultraviolet (DUV) laser-based technology, defects can be detected on patterned wafers (wafers with printed circuit images) as they move between processing steps. Defects include particles, open circuit lines, and shorts between lines. The Applied UVision 6 wafer inspection system detects yield-limiting defects in the critical patterning layers of logic and memory devices. The UVision® 6 system, featuring the same proprietary core technology of deep ultraviolet (DUV) laser illumination, with simultaneous dual channel [brightfield (BF) reflected light and grayfield (GF) scattered light] collection optics. The system further enhances defect inspection capabilities on advanced patterning layers in both FEOL and BEOL applications down to the 1xnm node, addressing such technologies as ArF immersion lithography, double and quad patterning, and extreme ultraviolet layers.문서
문서 없음
카테고리
Defect Inspection
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
120338
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
APPLIED MATERIALS (AMAT)
UVISION 6
카테고리
Defect Inspection
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
120338
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
IQC환경 설정
환경 설정 없음OEM 모델 설명
Using deep ultraviolet (DUV) laser-based technology, defects can be detected on patterned wafers (wafers with printed circuit images) as they move between processing steps. Defects include particles, open circuit lines, and shorts between lines. The Applied UVision 6 wafer inspection system detects yield-limiting defects in the critical patterning layers of logic and memory devices. The UVision® 6 system, featuring the same proprietary core technology of deep ultraviolet (DUV) laser illumination, with simultaneous dual channel [brightfield (BF) reflected light and grayfield (GF) scattered light] collection optics. The system further enhances defect inspection capabilities on advanced patterning layers in both FEOL and BEOL applications down to the 1xnm node, addressing such technologies as ArF immersion lithography, double and quad patterning, and extreme ultraviolet layers.문서
문서 없음