설명
설명 없음환경 설정
환경 설정 없음OEM 모델 설명
Plasma Source: ICP Plasma Process Gas: 2Lines (standard) *Maximum 6 Lines (e.g. Chlorinated Gas, Fluoride Gas, Ar, O2, He ) Applicable Wafer: ø100 mm wafer with orientation flat (standard) *Option : ø50 mm, ø75 mm, ø50 mm (with O.F.) Wafer Material: Silicon (standard) *Option : Quartz, GaAs, Sapphire Machine Dimensions / Weight*1: W 1170 mm × D 2650 mm, H 2100 mm / 1900 kg (Main body only) Power Source*2: Single phase AC 200V, 6 kVA and Three-phase AC 200V, 15 kVA (Main body only) Dry Air: 0.49 M Pa to 0.54 M Pa, 40 L / min [A.N.R.] N 2Source: 0.5 M Pa to 0.7 M Pa, 50 L / min문서
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PANASONIC
E600L
검증됨
카테고리
Dry Etch
마지막 검증일: 29일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
102952
웨이퍼 사이즈:
12"/300mm
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
PANASONIC
E600L
카테고리
Dry Etch
마지막 검증일: 29일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
102952
웨이퍼 사이즈:
12"/300mm
빈티지:
알 수 없음
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
환경 설정 없음OEM 모델 설명
Plasma Source: ICP Plasma Process Gas: 2Lines (standard) *Maximum 6 Lines (e.g. Chlorinated Gas, Fluoride Gas, Ar, O2, He ) Applicable Wafer: ø100 mm wafer with orientation flat (standard) *Option : ø50 mm, ø75 mm, ø50 mm (with O.F.) Wafer Material: Silicon (standard) *Option : Quartz, GaAs, Sapphire Machine Dimensions / Weight*1: W 1170 mm × D 2650 mm, H 2100 mm / 1900 kg (Main body only) Power Source*2: Single phase AC 200V, 6 kVA and Three-phase AC 200V, 15 kVA (Main body only) Dry Air: 0.49 M Pa to 0.54 M Pa, 40 L / min [A.N.R.] N 2Source: 0.5 M Pa to 0.7 M Pa, 50 L / min문서
문서 없음