설명
설명 없음환경 설정
AMAT P-5000 Mark II MxP+ Dielectric Dielectric Dielectric Etch Etch/Ash/Clean - Plasma Processing Currently Configured for: 200mm Software: 4.8_26 MF: P5000 Mark II Qty 2 - MxP WEB ESC: Polymide Qty 2 - MxP+ Dielectric ESC: Ceramic Gases Used: SF6, CL2, CF4, HBR, HE/O2, CHF3, O2, AR, CH3F MFCs: 20 DIgital MFC's Unit or Horiba Robot: ROBOT ASSY 8 IN AMAT 5000 Dry Pumps: 1-BA100, 4-DS80/250 Chillers: 3 Neslab 150, 1-AMAT-0OEM 모델 설명
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.문서
문서 없음
카테고리
Dry / Plasma Etch
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
125398
웨이퍼 사이즈:
6"/150mm, 8"/200mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
APPLIED MATERIALS (AMAT)
P5000 ETCH
카테고리
Dry / Plasma Etch
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
125398
웨이퍼 사이즈:
6"/150mm, 8"/200mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
AMAT P-5000 Mark II MxP+ Dielectric Dielectric Dielectric Etch Etch/Ash/Clean - Plasma Processing Currently Configured for: 200mm Software: 4.8_26 MF: P5000 Mark II Qty 2 - MxP WEB ESC: Polymide Qty 2 - MxP+ Dielectric ESC: Ceramic Gases Used: SF6, CL2, CF4, HBR, HE/O2, CHF3, O2, AR, CH3F MFCs: 20 DIgital MFC's Unit or Horiba Robot: ROBOT ASSY 8 IN AMAT 5000 Dry Pumps: 1-BA100, 4-DS80/250 Chillers: 3 Neslab 150, 1-AMAT-0OEM 모델 설명
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.문서
문서 없음