설명
ETCH환경 설정
환경 설정 없음OEM 모델 설명
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.문서
문서 없음
APPLIED MATERIALS (AMAT)
P5000 ETCH
검증됨
카테고리
Dry / Plasma Etch
마지막 검증일: 어제
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
116514
웨이퍼 사이즈:
8"/200mm
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
APPLIED MATERIALS (AMAT)
P5000 ETCH
카테고리
Dry / Plasma Etch
마지막 검증일: 어제
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
116514
웨이퍼 사이즈:
8"/200mm
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
ETCH환경 설정
환경 설정 없음OEM 모델 설명
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.문서
문서 없음