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APPLIED MATERIALS (AMAT) P5000 ETCH
    설명
    설명 없음
    환경 설정
    CHA - MxP+ Oxide Etch w/ESC CHB - MxP+ Oxide Etch w/ESC Peripherals - AMAT-0, Neslab HX- 150, Mini Controller, Generator Rack.
    OEM 모델 설명
    The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.
    문서

    문서 없음

    카테고리
    Dry / Plasma Etch

    마지막 검증일: 60일 이상 전

    주요 품목 세부 정보

    조건:

    Refurbished


    작동 상태:

    알 수 없음


    제품 ID:

    113159


    웨이퍼 사이즈:

    8"/200mm


    빈티지:

    알 수 없음


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기

    APPLIED MATERIALS (AMAT)

    P5000 ETCH

    verified-listing-icon
    검증됨
    카테고리
    Dry / Plasma Etch
    마지막 검증일: 60일 이상 전
    listing-photo-51586aa5662e47a28e61e504c5d89b21-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    주요 품목 세부 정보

    조건:

    Refurbished


    작동 상태:

    알 수 없음


    제품 ID:

    113159


    웨이퍼 사이즈:

    8"/200mm


    빈티지:

    알 수 없음


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    설명 없음
    환경 설정
    CHA - MxP+ Oxide Etch w/ESC CHB - MxP+ Oxide Etch w/ESC Peripherals - AMAT-0, Neslab HX- 150, Mini Controller, Generator Rack.
    OEM 모델 설명
    The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.
    문서

    문서 없음

    유사 등재물
    모두 보기