설명
WCVD(Ch.A) Tungsten deposition; 1x (Ch.B) plasma corrosion; 1 transfer chamber (robot+elevator); 1 input chamber for 2 cassettes and 1 wafer aligner환경 설정
환경 설정 없음OEM 모델 설명
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.문서
문서 없음
APPLIED MATERIALS (AMAT)
P5000 ETCH
검증됨
카테고리
Dry / Plasma Etch
마지막 검증일: 8일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
115981
웨이퍼 사이즈:
알 수 없음
빈티지:
1994
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
APPLIED MATERIALS (AMAT)
P5000 ETCH
카테고리
Dry / Plasma Etch
마지막 검증일: 8일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
115981
웨이퍼 사이즈:
알 수 없음
빈티지:
1994
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
WCVD(Ch.A) Tungsten deposition; 1x (Ch.B) plasma corrosion; 1 transfer chamber (robot+elevator); 1 input chamber for 2 cassettes and 1 wafer aligner환경 설정
환경 설정 없음OEM 모델 설명
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.문서
문서 없음