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PLASMATHERM VERSALINE ICP
    설명
    설명 없음
    환경 설정
    Parameter DSE IV Specification Si Etch Rate (µm/min) ≥7.5 Etch Depth 350 µm CD size 1020 x 1020 µm Aspect ratio 1:3 Si exposed area ~70% Si: PR Selectivity >100:1 Si: Si02 Selectivity >150:1 Sidewall profile 90 ± 20 Sidewall roughness (µm) <2 Within wafer Non-uniformity @ 6" <±5% excluding edge exclusion 6mm
    OEM 모델 설명
    "The PLASMA-THERM VERSALINE ICP is an Inductive Couple Plasma (ICP) etch platform that has been developed over decades of technological evolution at Plasma-Therm®. It offers high flexibility for application-optimized processes, with a large library of processes for a variety of applications, including wireless, photonics, power devices, compound semiconductors, memory, quantum, and advanced packaging. The platform can handle a wide range of materials, including II-VIs and III-Vs, silicon-based materials, dielectrics, polymers, metals, metal oxides and nitrides, and piezoelectrics. It also supports corrosive chemistry with corrosion-resistant components. The hardware of the VERSALINE ICP is flexible and configurable, with options for handling cassette cluster systems or single-substrate loadlocks. It features a 2MHz ICP source that is heated for process stability and decreased first wafer effects, as well as increased MTBC. The substrate bias can be 13.56MHz or an optional 40MHz, and the substrate temperature can be controlled with backside helium using mechanical or electrostatic clamping. The platform also offers application-specific substrate electrode temperature ranges. The VERSALINE ICP is controlled by the Cortex control system and supports the EndpointWorks program for laser, optical emission, and other system parameter-based endpoints."
    문서

    PLASMATHERM

    VERSALINE ICP

    verified-listing-icon

    검증됨

    카테고리
    Dry / Plasma Etch

    마지막 검증일: 60일 이상 전

    주요 품목 세부 정보

    조건:

    New


    작동 상태:

    Deinstalled / Crated


    제품 ID:

    109525


    웨이퍼 사이즈:

    6"/150mm


    빈티지:

    알 수 없음


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    PLASMATHERM VERSALINE ICP

    PLASMATHERM

    VERSALINE ICP

    Dry / Plasma Etch
    빈티지: 0조건: 중고
    마지막 검증일30일 이상 전

    PLASMATHERM

    VERSALINE ICP

    verified-listing-icon
    검증됨
    카테고리
    Dry / Plasma Etch
    마지막 검증일: 60일 이상 전
    listing-photo-64dd60aab40843768183e988b2918933-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    주요 품목 세부 정보

    조건:

    New


    작동 상태:

    Deinstalled / Crated


    제품 ID:

    109525


    웨이퍼 사이즈:

    6"/150mm


    빈티지:

    알 수 없음


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    설명 없음
    환경 설정
    Parameter DSE IV Specification Si Etch Rate (µm/min) ≥7.5 Etch Depth 350 µm CD size 1020 x 1020 µm Aspect ratio 1:3 Si exposed area ~70% Si: PR Selectivity >100:1 Si: Si02 Selectivity >150:1 Sidewall profile 90 ± 20 Sidewall roughness (µm) <2 Within wafer Non-uniformity @ 6" <±5% excluding edge exclusion 6mm
    OEM 모델 설명
    "The PLASMA-THERM VERSALINE ICP is an Inductive Couple Plasma (ICP) etch platform that has been developed over decades of technological evolution at Plasma-Therm®. It offers high flexibility for application-optimized processes, with a large library of processes for a variety of applications, including wireless, photonics, power devices, compound semiconductors, memory, quantum, and advanced packaging. The platform can handle a wide range of materials, including II-VIs and III-Vs, silicon-based materials, dielectrics, polymers, metals, metal oxides and nitrides, and piezoelectrics. It also supports corrosive chemistry with corrosion-resistant components. The hardware of the VERSALINE ICP is flexible and configurable, with options for handling cassette cluster systems or single-substrate loadlocks. It features a 2MHz ICP source that is heated for process stability and decreased first wafer effects, as well as increased MTBC. The substrate bias can be 13.56MHz or an optional 40MHz, and the substrate temperature can be controlled with backside helium using mechanical or electrostatic clamping. The platform also offers application-specific substrate electrode temperature ranges. The VERSALINE ICP is controlled by the Cortex control system and supports the EndpointWorks program for laser, optical emission, and other system parameter-based endpoints."
    문서
    유사 등재물
    모두 보기
    PLASMATHERM VERSALINE ICP

    PLASMATHERM

    VERSALINE ICP

    Dry / Plasma Etch빈티지: 0조건: 중고마지막 검증일:30일 이상 전
    PLASMATHERM VERSALINE ICP

    PLASMATHERM

    VERSALINE ICP

    Dry / Plasma Etch빈티지: 0조건: 중고마지막 검증일:12일 전
    PLASMATHERM VERSALINE ICP

    PLASMATHERM

    VERSALINE ICP

    Dry / Plasma Etch빈티지: 0조건: 중고마지막 검증일:27일 전