메인 콘텐츠로 건너뛰기
We value your privacy

We and our selected partners use cookies to enhance your browsing experience, serve personalized content, and analyze our traffic. By clicking "Accept All", you consent to our use of cookies. 더 알아보기

Moov logo

Moov Icon
PLASMATHERM VERSALINE ICP
  • PLASMATHERM VERSALINE ICP
  • PLASMATHERM VERSALINE ICP
  • PLASMATHERM VERSALINE ICP
설명
New in OEM crate, never used.
환경 설정
Plasma-Therm Versaline DSE-IV Configured for 150mm, upgradeable to 200mm PAGE PAGE DESCRIPTION DOCUMENT CHANGES 2 CONFIGURATION SPECIFIC LAYOUT INITIAL RELEASE 3 EQUIPMENT IDENTIFICATION INITIAL RELEASE 4 MODULE DETAIL : PROCESS MODULE INITIAL RELEASE 5 MODULE DETAIL : PSU INITIAL RELEASE MODULE DETAIL : UT INITIAL RELEASE 6 CABLE INTERCONNECT INITIAL RELEASE 7 VACUUM PUMPS INITIAL RELEASE FOOTPAD LAYOUT INITIAL RELEASE HEAT EXCHANGER UNIT INITIAL RELEASE TM-VPU INTERFACE OPTIONS INITIAL RELEASE 8 UTILITIES REQUIREMENTS INITIAL RELEASE GAS LINE CONFIGURATION INITIAL RELEASE
OEM 모델 설명
"The PLASMA-THERM VERSALINE ICP is an Inductive Couple Plasma (ICP) etch platform that has been developed over decades of technological evolution at Plasma-Therm®. It offers high flexibility for application-optimized processes, with a large library of processes for a variety of applications, including wireless, photonics, power devices, compound semiconductors, memory, quantum, and advanced packaging. The platform can handle a wide range of materials, including II-VIs and III-Vs, silicon-based materials, dielectrics, polymers, metals, metal oxides and nitrides, and piezoelectrics. It also supports corrosive chemistry with corrosion-resistant components. The hardware of the VERSALINE ICP is flexible and configurable, with options for handling cassette cluster systems or single-substrate loadlocks. It features a 2MHz ICP source that is heated for process stability and decreased first wafer effects, as well as increased MTBC. The substrate bias can be 13.56MHz or an optional 40MHz, and the substrate temperature can be controlled with backside helium using mechanical or electrostatic clamping. The platform also offers application-specific substrate electrode temperature ranges. The VERSALINE ICP is controlled by the Cortex control system and supports the EndpointWorks program for laser, optical emission, and other system parameter-based endpoints."
문서
카테고리
Dry / Plasma Etch

마지막 검증일: 60일 이상 전

주요 품목 세부 정보

조건:

Used


작동 상태:

알 수 없음


제품 ID:

100265


웨이퍼 사이즈:

6"/150mm


빈티지:

2020


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

PLASMATHERM

VERSALINE ICP

verified-listing-icon
검증됨
카테고리
Dry / Plasma Etch
마지막 검증일: 60일 이상 전
listing-photo-87c330a1af764c1a8dfad2a764ce68df-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
주요 품목 세부 정보

조건:

Used


작동 상태:

알 수 없음


제품 ID:

100265


웨이퍼 사이즈:

6"/150mm


빈티지:

2020


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
New in OEM crate, never used.
환경 설정
Plasma-Therm Versaline DSE-IV Configured for 150mm, upgradeable to 200mm PAGE PAGE DESCRIPTION DOCUMENT CHANGES 2 CONFIGURATION SPECIFIC LAYOUT INITIAL RELEASE 3 EQUIPMENT IDENTIFICATION INITIAL RELEASE 4 MODULE DETAIL : PROCESS MODULE INITIAL RELEASE 5 MODULE DETAIL : PSU INITIAL RELEASE MODULE DETAIL : UT INITIAL RELEASE 6 CABLE INTERCONNECT INITIAL RELEASE 7 VACUUM PUMPS INITIAL RELEASE FOOTPAD LAYOUT INITIAL RELEASE HEAT EXCHANGER UNIT INITIAL RELEASE TM-VPU INTERFACE OPTIONS INITIAL RELEASE 8 UTILITIES REQUIREMENTS INITIAL RELEASE GAS LINE CONFIGURATION INITIAL RELEASE
OEM 모델 설명
"The PLASMA-THERM VERSALINE ICP is an Inductive Couple Plasma (ICP) etch platform that has been developed over decades of technological evolution at Plasma-Therm®. It offers high flexibility for application-optimized processes, with a large library of processes for a variety of applications, including wireless, photonics, power devices, compound semiconductors, memory, quantum, and advanced packaging. The platform can handle a wide range of materials, including II-VIs and III-Vs, silicon-based materials, dielectrics, polymers, metals, metal oxides and nitrides, and piezoelectrics. It also supports corrosive chemistry with corrosion-resistant components. The hardware of the VERSALINE ICP is flexible and configurable, with options for handling cassette cluster systems or single-substrate loadlocks. It features a 2MHz ICP source that is heated for process stability and decreased first wafer effects, as well as increased MTBC. The substrate bias can be 13.56MHz or an optional 40MHz, and the substrate temperature can be controlled with backside helium using mechanical or electrostatic clamping. The platform also offers application-specific substrate electrode temperature ranges. The VERSALINE ICP is controlled by the Cortex control system and supports the EndpointWorks program for laser, optical emission, and other system parameter-based endpoints."
문서