설명
Dry etch system환경 설정
Known issues: Not included: Pirani Gauge; (Qty 2) Capacitance Manometer; (Qty 2) PS1 Solenoid Bank; (Qty 2) Bolts for LLM Lid; Robot PS1 Center Stage; Chiller; (Qty 4) Fiber Optics; (Qty 4) Linear Rail Bearings LM Robot Handler (Qty 3) FOUP Factory Interface (Qty 2) LLM Arm Process: HF NH3 Gas Etch CIM: IFAOEM 모델 설명
Certas WING™ is the 2nd generation plasma-free gas chemical etch system from Tokyo Electron targeted at selective oxide film etching. Productivity of the new tool has been improved with twice the throughput while maintaining the same footprint. The Certas WING™ process capability has been expanded to achieve higher etch volumes and provide flexibility for etching of a wider variety of silicon based films that will be used in future semiconductor device manufacturing.문서
문서 없음
카테고리
Dry / Plasma Etch
마지막 검증일: 6일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
154814
웨이퍼 사이즈:
12"/300mm
빈티지:
2011
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
TEL / TOKYO ELECTRON
Certas WING
카테고리
Dry / Plasma Etch
마지막 검증일: 6일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
154814
웨이퍼 사이즈:
12"/300mm
빈티지:
2011
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
Dry etch system환경 설정
Known issues: Not included: Pirani Gauge; (Qty 2) Capacitance Manometer; (Qty 2) PS1 Solenoid Bank; (Qty 2) Bolts for LLM Lid; Robot PS1 Center Stage; Chiller; (Qty 4) Fiber Optics; (Qty 4) Linear Rail Bearings LM Robot Handler (Qty 3) FOUP Factory Interface (Qty 2) LLM Arm Process: HF NH3 Gas Etch CIM: IFAOEM 모델 설명
Certas WING™ is the 2nd generation plasma-free gas chemical etch system from Tokyo Electron targeted at selective oxide film etching. Productivity of the new tool has been improved with twice the throughput while maintaining the same footprint. The Certas WING™ process capability has been expanded to achieve higher etch volumes and provide flexibility for etching of a wider variety of silicon based films that will be used in future semiconductor device manufacturing.문서
문서 없음