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설명
RIE Single Wafer Plasma Metal Etcher 8” (dia.) Chuck RFX-600 RF Generator, 13.56 MHz Automatic RF Matching Network Vacuum Loadlock 4ea Mass Flow Controllers 100 sccm O2 100 sccm CF4 50 sccm Cl2 100 sccm BCl3 PC Process Controller Color Touch Screen Graphical User Interface환경 설정
환경 설정 없음OEM 모델 설명
The Minilock system incorporates a vacuum load-lock in a compact table top console. The system has been designed to meet all the safety and equipment needs for the more challenging processes in the laboratory environment. Its modular design and optional gas cabinet provide the user with a turnkey system that meets your safety, facility and processing needs. The Minilock is suitable for anisotropic etching of aluminum, silicides, gallium arsenide and other materials requiring chlorinated chemistries. It is also suitable for anisotropic etching of silicon dioxide, silicon nitride and other materials requiring high selectivity and a controlled anisotropic etch. The system specifications are 35"Wx26"Dx48"H with RF Power of 600 watt, 13.56 MHz and up to 6 Mass Flow Controllers. The maximum wafer size is up to 8".문서
문서 없음
TRION
MINILOCK
카테고리
Dry / Plasma Etch
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
12010
웨이퍼 사이즈:
8"/200mm
빈티지:
1995
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설명
RIE Single Wafer Plasma Metal Etcher 8” (dia.) Chuck RFX-600 RF Generator, 13.56 MHz Automatic RF Matching Network Vacuum Loadlock 4ea Mass Flow Controllers 100 sccm O2 100 sccm CF4 50 sccm Cl2 100 sccm BCl3 PC Process Controller Color Touch Screen Graphical User Interface환경 설정
환경 설정 없음OEM 모델 설명
The Minilock system incorporates a vacuum load-lock in a compact table top console. The system has been designed to meet all the safety and equipment needs for the more challenging processes in the laboratory environment. Its modular design and optional gas cabinet provide the user with a turnkey system that meets your safety, facility and processing needs. The Minilock is suitable for anisotropic etching of aluminum, silicides, gallium arsenide and other materials requiring chlorinated chemistries. It is also suitable for anisotropic etching of silicon dioxide, silicon nitride and other materials requiring high selectivity and a controlled anisotropic etch. The system specifications are 35"Wx26"Dx48"H with RF Power of 600 watt, 13.56 MHz and up to 6 Mass Flow Controllers. The maximum wafer size is up to 8".문서
문서 없음