설명
Target Substrate 4H-SiC Hot Wall CVD Wafer Size 100 mm (4") / 150 mm (6") — Growth Rate > 50 μm / hour High-speed growth Continuous Growth Thickness Up to 150 μm Continuous deposition capable Throughput 4 wafers / hour Based on 10 μm SiC epi Wafer In-plane Temp. Uniformity (4") < 1 °C — Wafer In-plane Temp. Uniformity (6") < 2 °C — Thickness Uniformity < 2 % (σ/mean) E.E = 3 mm Doping Concentration Uniformity < 4 % (σ/mean) E.E = 6 mm Defect Density < 0.02 / cm2 Low-defect Reactor Type Hot-wall CVD Single-wafer Heating Method Resistive Heating Side + bottom Gas Inlet Upper Gas Inlet Nozzle position adjustable Wafer Rotation High-speed Rotation Ensures uniformity Wafer Transfer Cassette-to-Cassette Auto Transfer Robotic auto transfer High-Temp Handling High-temperature wafer handling supported Improves productivity Source Gas SiHCl3 (TCS), SiH2Cl2 (DCS) Silicon source Carrier Gas H2 Hydrogen Etching Gas HCl — Doping Gas N2 (n-type) / TMA (p-type) Common usage환경 설정
SIC EpitaxialOEM 모델 설명
single-wafer SiC Epitaxial Reactor문서
문서 없음
카테고리
Epitaxial deposition (EPI)
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
150879
웨이퍼 사이즈:
6"/150mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
NUFLARE
EPIREVO S6
카테고리
Epitaxial deposition (EPI)
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
150879
웨이퍼 사이즈:
6"/150mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
Target Substrate 4H-SiC Hot Wall CVD Wafer Size 100 mm (4") / 150 mm (6") — Growth Rate > 50 μm / hour High-speed growth Continuous Growth Thickness Up to 150 μm Continuous deposition capable Throughput 4 wafers / hour Based on 10 μm SiC epi Wafer In-plane Temp. Uniformity (4") < 1 °C — Wafer In-plane Temp. Uniformity (6") < 2 °C — Thickness Uniformity < 2 % (σ/mean) E.E = 3 mm Doping Concentration Uniformity < 4 % (σ/mean) E.E = 6 mm Defect Density < 0.02 / cm2 Low-defect Reactor Type Hot-wall CVD Single-wafer Heating Method Resistive Heating Side + bottom Gas Inlet Upper Gas Inlet Nozzle position adjustable Wafer Rotation High-speed Rotation Ensures uniformity Wafer Transfer Cassette-to-Cassette Auto Transfer Robotic auto transfer High-Temp Handling High-temperature wafer handling supported Improves productivity Source Gas SiHCl3 (TCS), SiH2Cl2 (DCS) Silicon source Carrier Gas H2 Hydrogen Etching Gas HCl — Doping Gas N2 (n-type) / TMA (p-type) Common usage환경 설정
SIC EpitaxialOEM 모델 설명
single-wafer SiC Epitaxial Reactor문서
문서 없음