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OXFORD CrystalFlex
    설명
    CrystalFlex HPVE Reactor furnace GaN wafer for R&D and/or Production
    환경 설정
    SPECS: Growth rate - Up to 200 microns/hour Growth pressure - Atmospheric operation Maximum Furnace Temp - 1200°C Carrier gas - Inert gas of N2 or Ar Reactant Gas - HCl and NH Wafer capacity Wafer size - Max Load 50mm - 12 75mm - 4 100mm - 3 150mm - 1
    OEM 모델 설명
    Multi-Wafer Hydride Vapor Phase Epitaxy (HVPE) Reactor
    문서

    문서 없음

    verified-listing-icon

    검증됨

    카테고리
    Epitaxial deposition (EPI)

    마지막 검증일: 60일 이상 전

    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    89778


    웨이퍼 사이즈:

    6"/150mm


    빈티지:

    2009


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    OXFORD CrystalFlex

    OXFORD

    CrystalFlex

    Epitaxial deposition (EPI)
    빈티지: 2009조건: 중고
    마지막 검증일60일 이상 전

    OXFORD

    CrystalFlex

    verified-listing-icon
    검증됨
    카테고리
    Epitaxial deposition (EPI)
    마지막 검증일: 60일 이상 전
    listing-photo-17937d13f8fb4c8480f2e9ff26c99b82-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/75737/17937d13f8fb4c8480f2e9ff26c99b82/e4cdcbdcdd844081b0ae484a013abd87_c3d719b9e139492abd909eb4033db3f1_mw.jpeg
    listing-photo-17937d13f8fb4c8480f2e9ff26c99b82-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/75737/17937d13f8fb4c8480f2e9ff26c99b82/ce4071fc8a614a36a3ce1589ca8bb43b_d9e7ccfb224540afa27ba59cf5fc3e77_mw.jpeg
    listing-photo-17937d13f8fb4c8480f2e9ff26c99b82-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/75737/17937d13f8fb4c8480f2e9ff26c99b82/6add78974e6d40d2ab3ed5daef9f96e2_6d1fe68b959045d0a805a48f03bf830a_mw.jpeg
    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    89778


    웨이퍼 사이즈:

    6"/150mm


    빈티지:

    2009


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    CrystalFlex HPVE Reactor furnace GaN wafer for R&D and/or Production
    환경 설정
    SPECS: Growth rate - Up to 200 microns/hour Growth pressure - Atmospheric operation Maximum Furnace Temp - 1200°C Carrier gas - Inert gas of N2 or Ar Reactant Gas - HCl and NH Wafer capacity Wafer size - Max Load 50mm - 12 75mm - 4 100mm - 3 150mm - 1
    OEM 모델 설명
    Multi-Wafer Hydride Vapor Phase Epitaxy (HVPE) Reactor
    문서

    문서 없음

    유사 등재물
    모두 보기
    OXFORD CrystalFlex

    OXFORD

    CrystalFlex

    Epitaxial deposition (EPI)빈티지: 2009조건: 중고마지막 검증일:60일 이상 전