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OXFORD CrystalFlex
    설명
    CrystalFlex HPVE Reactor furnace GaN wafer for R&D and/or Production
    환경 설정
    SPECS: Growth rate - Up to 200 microns/hour Growth pressure - Atmospheric operation Maximum Furnace Temp - 1200°C Carrier gas - Inert gas of N2 or Ar Reactant Gas - HCl and NH Wafer capacity Wafer size - Max Load 50mm - 12 75mm - 4 100mm - 3 150mm - 1
    OEM 모델 설명
    Multi-Wafer Hydride Vapor Phase Epitaxy (HVPE) Reactor
    문서

    문서 없음

    OXFORD

    CrystalFlex

    verified-listing-icon

    검증됨

    카테고리
    Epitaxial deposition (EPI)

    마지막 검증일: 60일 이상 전

    주요 품목 세부 정보
    조건:

    Used

    작동 상태:

    알 수 없음

    제품 ID:

    89778

    웨이퍼 사이즈:

    6"/150mm

    빈티지:

    2009

    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    OXFORD CrystalFlex

    OXFORD

    CrystalFlex

    Epitaxial deposition (EPI)
    빈티지: 2009조건: 중고
    마지막 검증일60일 이상 전

    OXFORD

    CrystalFlex

    verified-listing-icon
    검증됨
    카테고리
    Epitaxial deposition (EPI)
    마지막 검증일: 60일 이상 전
    listing-photo-17937d13f8fb4c8480f2e9ff26c99b82-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/75737/17937d13f8fb4c8480f2e9ff26c99b82/e4cdcbdcdd844081b0ae484a013abd87_c3d719b9e139492abd909eb4033db3f1_mw.jpeg
    listing-photo-17937d13f8fb4c8480f2e9ff26c99b82-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/75737/17937d13f8fb4c8480f2e9ff26c99b82/ce4071fc8a614a36a3ce1589ca8bb43b_d9e7ccfb224540afa27ba59cf5fc3e77_mw.jpeg
    listing-photo-17937d13f8fb4c8480f2e9ff26c99b82-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/75737/17937d13f8fb4c8480f2e9ff26c99b82/6add78974e6d40d2ab3ed5daef9f96e2_6d1fe68b959045d0a805a48f03bf830a_mw.jpeg
    주요 품목 세부 정보
    조건:

    Used

    작동 상태:

    알 수 없음

    제품 ID:

    89778

    웨이퍼 사이즈:

    6"/150mm

    빈티지:

    2009

    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    CrystalFlex HPVE Reactor furnace GaN wafer for R&D and/or Production
    환경 설정
    SPECS: Growth rate - Up to 200 microns/hour Growth pressure - Atmospheric operation Maximum Furnace Temp - 1200°C Carrier gas - Inert gas of N2 or Ar Reactant Gas - HCl and NH Wafer capacity Wafer size - Max Load 50mm - 12 75mm - 4 100mm - 3 150mm - 1
    OEM 모델 설명
    Multi-Wafer Hydride Vapor Phase Epitaxy (HVPE) Reactor
    문서

    문서 없음

    유사 등재물
    모두 보기
    OXFORD CrystalFlex

    OXFORD

    CrystalFlex

    Epitaxial deposition (EPI)빈티지: 2009조건: 중고마지막 검증일:60일 이상 전