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설명
CrystalFlex HPVE Reactor furnace GaN wafer for R&D and/or Production환경 설정
SPECS: Growth rate - Up to 200 microns/hour Growth pressure - Atmospheric operation Maximum Furnace Temp - 1200°C Carrier gas - Inert gas of N2 or Ar Reactant Gas - HCl and NH Wafer capacity Wafer size - Max Load 50mm - 12 75mm - 4 100mm - 3 150mm - 1OEM 모델 설명
Multi-Wafer Hydride Vapor Phase Epitaxy (HVPE) Reactor문서
문서 없음
카테고리
Epitaxial deposition (EPI)
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
89778
웨이퍼 사이즈:
6"/150mm
빈티지:
2009
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
OXFORD
CrystalFlex
카테고리
Epitaxial deposition (EPI)
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
89778
웨이퍼 사이즈:
6"/150mm
빈티지:
2009
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
CrystalFlex HPVE Reactor furnace GaN wafer for R&D and/or Production환경 설정
SPECS: Growth rate - Up to 200 microns/hour Growth pressure - Atmospheric operation Maximum Furnace Temp - 1200°C Carrier gas - Inert gas of N2 or Ar Reactant Gas - HCl and NH Wafer capacity Wafer size - Max Load 50mm - 12 75mm - 4 100mm - 3 150mm - 1OEM 모델 설명
Multi-Wafer Hydride Vapor Phase Epitaxy (HVPE) Reactor문서
문서 없음