설명

Meyer Burger AK 800 ICP microwave/Rf RIE Moderate density RIE and uwave; can be used as etch and dep in same chamber config, multi-material

환경 설정

• 2 magnetrons powered by two 2.45 GHz uwave generators delivers energy via 4 independent wave guides to create a plasma rich in free radical concentration which controls the chemical side of the etch process and is important for etch rate and selectivity. • The two magnetrons are on opposite sides of the process chamber making the (microwave) power distribution very uniform with equal power setting or you can adjust the power setting to acquire a power gradient. • The cathode is powered by a 13.56 MHz Rf power supply and match to create a DC bias where ions are accelerated towards the cathode and perpendicular to the substrate to provide anisotropy. • Independent control of the chemical mechanism (uwave) and the physical mechanism (Rf) allows the user ultimate flexibility for profiling, etch rate, ion bombardment and selectivity. • Process gasses include O2, Ar, Cl2, BCl3, C4H8, CF4, and SF6 enabling it to etch metals, dielectrics, metal oxides, ITO, compound semiconductors, organics and much more. • The cathode and chamber wall temperatures are independently controlled via two powerful heat exchangers capable of maintaining temperatures between -50C and 200C. • Process gasses with lower vapor pressures such as C4F8 (used for polymer formation for deep trench etching) and BCl3 are heated by Quintex parallel heaters and jackets to avoid condensation. • A facilities rack distributes house cooling water, CDA, N2, and process gases to the appropriate module. It also includes a SCL K05 blower to cool the waveguides. • Both L/L and process module use Ebara (600 and 1200m3/hr respectively) dry pumps and an Ebara 1704 1800l/s turbo pump to quickly achieve base and transfer pressures. • A VAT butterfly valve on the process chamber allows the operator the ability to select the process pressure independent of the gas flow. • The (450 x 450 mm) substrate carrier is made of graphite and serves as the cathode when transferred and locked into the process chamber. It also contains a heater jacket for precise temp control of the cathode. Process Module (PM): 1. Magnetron head: Muegge 3kW MH3000S-220CV x 4 2. Waveguides w/ quartz rods x 4 3. A/E Navio Match Box 4. Heater jacket for entire module 5. VAT gate valve for L/L- PM interface 6. Ebara EMT 1704 1660L/s turbo 7. VAT butterfly valve for independent pressure control 8. Gas box: BCl3, Cl2, C4F8, CF4, CF3H, SiF6, Ar, O2 9. Hydraulic lift to open PM 10. AMR D-58649 hydraulic pump (to open the PM) Load Lock: 11. Siemens Simatic GUI (2nd) 12.Manual load station 13.Ebara EMT 1704 1660 L/s turbo Power Distribution and Control Unit (PDCU): 14. Muegge 3kW 2.45 GHz microwave generator 15. Muegge 3kW 2.45 GHz microwave generator 16. A/E Cesar 1320 3kW 13.56 MHz Rf generator 17. Siemens Simatic 847D IPC 18. Siemens Simatic 19T Gui Dry Vacuum Pumps (2): 19. Dry pump: Ebara EV-S100P 600m3/h for L/L 20. Dry Pump: Ebara EV-M202N- 1200m3/hr for PM Heat Exchangers (2): 21. Julabo FP51-SL (-51 to 200C) 22. Julabo FP50-HL (-51 to 200C)