설명
설명 없음환경 설정
환경 설정 없음OEM 모델 설명
The c.ACTIVATOR 150 is a high-temperature furnace developed by centrotherm for annealing SiC and other materials in Ar, N2, and H2 ambient. It is designed for high-volume SiC device manufacturing, with two versions available that can handle wafer sizes up to 200 mm. The unique all-metal-free design of the process tube and heating system allows for process temperatures up to 2000°C. The main application of the c.ACTIVATOR 150 is electrical activation by post-implantation annealing for SiC MOSFET and diode manufacturing at high temperatures of up to 2000°C. Other applications include high-temperature hydrogen annealing to smooth, clean, and round trenches after RIE etching in trench MOSFET manufacturing; cost-efficient dopant activation in GaN wafers at 1150-1250°C; and annealing of AlN seed layers and AlN epitaxial layers at ~1700°C. Overall, the c.ACTIVATOR 150 is a versatile tool for high-temperature annealing applications in semiconductor device manufacturing.문서
문서 없음
카테고리
Furnaces / Diffusion
마지막 검증일: 2일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
145197
웨이퍼 사이즈:
6"/150mm
빈티지:
2013
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
CENTROTHERM
c.ACTIVATOR 150
카테고리
Furnaces / Diffusion
마지막 검증일: 2일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
145197
웨이퍼 사이즈:
6"/150mm
빈티지:
2013
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
환경 설정 없음OEM 모델 설명
The c.ACTIVATOR 150 is a high-temperature furnace developed by centrotherm for annealing SiC and other materials in Ar, N2, and H2 ambient. It is designed for high-volume SiC device manufacturing, with two versions available that can handle wafer sizes up to 200 mm. The unique all-metal-free design of the process tube and heating system allows for process temperatures up to 2000°C. The main application of the c.ACTIVATOR 150 is electrical activation by post-implantation annealing for SiC MOSFET and diode manufacturing at high temperatures of up to 2000°C. Other applications include high-temperature hydrogen annealing to smooth, clean, and round trenches after RIE etching in trench MOSFET manufacturing; cost-efficient dopant activation in GaN wafers at 1150-1250°C; and annealing of AlN seed layers and AlN epitaxial layers at ~1700°C. Overall, the c.ACTIVATOR 150 is a versatile tool for high-temperature annealing applications in semiconductor device manufacturing.문서
문서 없음