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APPLIED MATERIALS (AMAT) xR80 LEAP II
    설명
    Already overhauled and installed , no missing part.
    환경 설정
    환경 설정 없음
    OEM 모델 설명
    The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.
    문서
    verified-listing-icon

    검증됨

    카테고리
    High Current

    마지막 검증일: 어제

    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    Deinstalled


    제품 ID:

    73860


    웨이퍼 사이즈:

    8"/200mm


    빈티지:

    2002


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    APPLIED MATERIALS (AMAT) xR80 LEAP II

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    High Current
    빈티지: 2002조건: 중고
    마지막 검증일어제

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    verified-listing-icon
    검증됨
    카테고리
    High Current
    마지막 검증일: 어제
    listing-photo-6f04c237e93e4d33a52efd115000f381-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/44458/6f04c237e93e4d33a52efd115000f381/1ed07c3b38ec4e89bdd9648f99acdaa2_amatxr80_mw.jpg
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    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    Deinstalled


    제품 ID:

    73860


    웨이퍼 사이즈:

    8"/200mm


    빈티지:

    2002


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    Already overhauled and installed , no missing part.
    환경 설정
    환경 설정 없음
    OEM 모델 설명
    The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.
    문서
    유사 등재물
    모두 보기
    APPLIED MATERIALS (AMAT) xR80 LEAP II

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    High Current빈티지: 2002조건: 중고마지막 검증일:어제
    APPLIED MATERIALS (AMAT) xR80 LEAP II

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    High Current빈티지: 0조건: 중고마지막 검증일:60일 이상 전