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SEN CORPORATION / SUMITOMO NV GSD HC3
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    The SEN Corporation / Sumitomo NV-GSD-HC3 is a high current ion implantation system designed for the efficient and high-volume production of devices such as DRAMs using 300 mm wafers. This model excels in ultra-low energy applications, offering implantation energy as low as 0.2 keV up to 80 keV. It ensures high current with minimal energy contamination through a deceleration mechanism, making it suitable for delicate processes down to 0.2 keV. The system features a high-performance, long-life ion source (ELS) for consistent performance. It provides high accuracy of implantation with excellent beam quality, minimizing metal contamination and cross-contamination using advanced technologies like the VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday). Additionally, a plasma shower system minimizes charge buildup, enhancing process stability.
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    검증됨

    카테고리
    High Current

    마지막 검증일: 9일 전

    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    144876


    웨이퍼 사이즈:

    12"/300mm


    빈티지:

    2002


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    SEN CORPORATION / SUMITOMO NV GSD HC3

    SEN CORPORATION / SUMITOMO

    NV GSD HC3

    High Current
    빈티지: 2002조건: 중고
    마지막 검증일9일 전

    SEN CORPORATION / SUMITOMO

    NV GSD HC3

    verified-listing-icon
    검증됨
    카테고리
    High Current
    마지막 검증일: 9일 전
    listing-photo-7bd7b9127d4644109ef4d48abef0bde5-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    144876


    웨이퍼 사이즈:

    12"/300mm


    빈티지:

    2002


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    Btah
    환경 설정
    IBS_HiCur
    OEM 모델 설명
    The SEN Corporation / Sumitomo NV-GSD-HC3 is a high current ion implantation system designed for the efficient and high-volume production of devices such as DRAMs using 300 mm wafers. This model excels in ultra-low energy applications, offering implantation energy as low as 0.2 keV up to 80 keV. It ensures high current with minimal energy contamination through a deceleration mechanism, making it suitable for delicate processes down to 0.2 keV. The system features a high-performance, long-life ion source (ELS) for consistent performance. It provides high accuracy of implantation with excellent beam quality, minimizing metal contamination and cross-contamination using advanced technologies like the VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday). Additionally, a plasma shower system minimizes charge buildup, enhancing process stability.
    문서

    문서 없음

    유사 등재물
    모두 보기
    SEN CORPORATION / SUMITOMO NV GSD HC3

    SEN CORPORATION / SUMITOMO

    NV GSD HC3

    High Current빈티지: 2002조건: 중고마지막 검증일:9일 전