설명
설명 없음환경 설정
환경 설정 없음OEM 모델 설명
The SEN Corporation / Sumitomo NV-GSD-HE is a globally recognized high-energy ion implantation system designed for 200mm, 150mm, and 125mm wafers, offering exceptional productivity in the energy range of up to 3 MeV. It supports an energy range between 10 keV and 3,000 keV, providing increased acquisition energy and improved efficiency through RF acceleration using RF resonators. The system features enhanced beam current at high energy levels due to optimized mass analyzing magnet and FEM (Final Energy Magnet). For higher implantation efficiency, it offers the option of installing a CVA (Continuous Variable Aperture). The NV-GSD-HE ensures high accuracy of implantation and maintains high beam quality by minimizing metal contamination and cross-contamination. The optional VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday) further reduce cross-contamination.문서
문서 없음
카테고리
High Current
마지막 검증일: 2일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
153263
웨이퍼 사이즈:
6"/150mm
빈티지:
2000
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SEN CORPORATION / SUMITOMO
NV GSD HE
카테고리
High Current
마지막 검증일: 2일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
153263
웨이퍼 사이즈:
6"/150mm
빈티지:
2000
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
환경 설정 없음OEM 모델 설명
The SEN Corporation / Sumitomo NV-GSD-HE is a globally recognized high-energy ion implantation system designed for 200mm, 150mm, and 125mm wafers, offering exceptional productivity in the energy range of up to 3 MeV. It supports an energy range between 10 keV and 3,000 keV, providing increased acquisition energy and improved efficiency through RF acceleration using RF resonators. The system features enhanced beam current at high energy levels due to optimized mass analyzing magnet and FEM (Final Energy Magnet). For higher implantation efficiency, it offers the option of installing a CVA (Continuous Variable Aperture). The NV-GSD-HE ensures high accuracy of implantation and maintains high beam quality by minimizing metal contamination and cross-contamination. The optional VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday) further reduce cross-contamination.문서
문서 없음