설명
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kv환경 설정
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvOEM 모델 설명
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.문서
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APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
검증됨
카테고리
High Current
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Parts Tool
작동 상태:
Deinstalled
제품 ID:
94077
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
APPLIED MATERIALS (AMAT) / VARIAN
VIISta HCP
카테고리
High Current
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Parts Tool
작동 상태:
Deinstalled
제품 ID:
94077
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kv환경 설정
AMAT Viista HCP implanter Part # E19291140 Part Description: Extraction Power Supply 80kvOEM 모델 설명
The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.문서
문서 없음