설명
High Energy Implanter환경 설정
환경 설정 없음OEM 모델 설명
The SEN CORPORATION / SUMITOMO NV-GSD HE3 is an ion implanter that uses high-energy and was developed by SEN Corporation. It is an improved version of the NV-GSD-HE3, with the addition of six RF resonators to the beam line. The system is configured for 300mm wafers and can accelerate boron ions up to 2 MeV with a beam current of 0.75 mA, as well as phosphorus ions up to 4.4 MeV with a beam current of 0.35 mA. Its primary use is in the image sensor market, where it increases the depth of CCD photodiodes in the wafer surface, allowing for higher pixel density in image sensors. The system also features a state-of-the-art beam profile controller for optimizing implant damage and micro-uniformity.문서
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SEN CORPORATION / SUMITOMO
NV GSD HE3
검증됨
카테고리
High Energy
마지막 검증일: 9일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
94625
웨이퍼 사이즈:
12"/300mm
빈티지:
알 수 없음
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SEN CORPORATION / SUMITOMO
NV GSD HE3
카테고리
High Energy
마지막 검증일: 9일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
94625
웨이퍼 사이즈:
12"/300mm
빈티지:
알 수 없음
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
High Energy Implanter환경 설정
환경 설정 없음OEM 모델 설명
The SEN CORPORATION / SUMITOMO NV-GSD HE3 is an ion implanter that uses high-energy and was developed by SEN Corporation. It is an improved version of the NV-GSD-HE3, with the addition of six RF resonators to the beam line. The system is configured for 300mm wafers and can accelerate boron ions up to 2 MeV with a beam current of 0.75 mA, as well as phosphorus ions up to 4.4 MeV with a beam current of 0.35 mA. Its primary use is in the image sensor market, where it increases the depth of CCD photodiodes in the wafer surface, allowing for higher pixel density in image sensors. The system also features a state-of-the-art beam profile controller for optimizing implant damage and micro-uniformity.문서
문서 없음