설명
process 1ch환경 설정
ID_HiEnrgOEM 모델 설명
High energy implanter. processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.문서
문서 없음
카테고리
Ion Implantation
마지막 검증일: 12일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
144810
웨이퍼 사이즈:
12"/300mm
빈티지:
2024
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AXCELIS
NV GSD HE3
카테고리
Ion Implantation
마지막 검증일: 12일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
144810
웨이퍼 사이즈:
12"/300mm
빈티지:
2024
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
process 1ch환경 설정
ID_HiEnrgOEM 모델 설명
High energy implanter. processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.문서
문서 없음