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AXCELIS NV GSD HE3
    설명
    High-Energy Ion Implanter
    환경 설정
    Ion Source Assembly Mass Analyzer Magnet RF Linear Accelerator (Multi-Stage RF Resonant Cavities) Wafer Processing Station Power Distribution Rack Vacuum Measurement Control Cabinets Wafer loading interface (EFEM/load port)
    OEM 모델 설명
    High energy implanter. processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.
    문서

    문서 없음

    verified-listing-icon

    검증됨

    카테고리
    Ion Implantation

    마지막 검증일: 2일 전

    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    158121


    웨이퍼 사이즈:

    알 수 없음


    빈티지:

    2015


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    AXCELIS NV GSD HE3

    AXCELIS

    NV GSD HE3

    Ion Implantation
    빈티지: 2015조건: 중고
    마지막 검증일2일 전

    AXCELIS

    NV GSD HE3

    verified-listing-icon
    검증됨
    카테고리
    Ion Implantation
    마지막 검증일: 2일 전
    listing-photo-d53a13aca5124e30ba1a743b42811718-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/78834/d53a13aca5124e30ba1a743b42811718/87207267e4ed4a36ab3558f76f6422b1_300a3f471eab423191ed5ecc3669fb851201a_mw.jpeg
    listing-photo-d53a13aca5124e30ba1a743b42811718-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/78834/d53a13aca5124e30ba1a743b42811718/293fd0a500b0403194d467be0da6485f_3a279265832d4e579e36f70f7ab991da45005c_mw.jpeg
    listing-photo-d53a13aca5124e30ba1a743b42811718-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/78834/d53a13aca5124e30ba1a743b42811718/db97945c1e4e46d29b866026c1a6a388_10ea938568f54619829cd1e62722992e45005c_mw.jpeg
    listing-photo-d53a13aca5124e30ba1a743b42811718-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/78834/d53a13aca5124e30ba1a743b42811718/a9d75e6a3da94304a44c4cccb9113e8f_33dcb50455a443cc82a69f9ee95edc0145005c_mw.jpeg
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    listing-photo-d53a13aca5124e30ba1a743b42811718-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/78834/d53a13aca5124e30ba1a743b42811718/4255e1ee829a4bf2ba40cab1b18b9b37_aef6a50e0374405584bf23a71f90d66845005c_mw.jpeg
    listing-photo-d53a13aca5124e30ba1a743b42811718-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/78834/d53a13aca5124e30ba1a743b42811718/65cc1966f0d64b73ae7808a3eb4b6aa8_c4aa585157da4d3193dae8cb633d871045005c_mw.jpeg
    listing-photo-d53a13aca5124e30ba1a743b42811718-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/78834/d53a13aca5124e30ba1a743b42811718/f60de923afe54ed8bbe910fe9e131717_0087ee0132744fe88007769cd136724c45005c_mw.jpeg
    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    158121


    웨이퍼 사이즈:

    알 수 없음


    빈티지:

    2015


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    High-Energy Ion Implanter
    환경 설정
    Ion Source Assembly Mass Analyzer Magnet RF Linear Accelerator (Multi-Stage RF Resonant Cavities) Wafer Processing Station Power Distribution Rack Vacuum Measurement Control Cabinets Wafer loading interface (EFEM/load port)
    OEM 모델 설명
    High energy implanter. processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.
    문서

    문서 없음

    유사 등재물
    모두 보기
    AXCELIS NV GSD HE3

    AXCELIS

    NV GSD HE3

    Ion Implantation빈티지: 2015조건: 중고마지막 검증일:2일 전
    AXCELIS NV GSD HE3

    AXCELIS

    NV GSD HE3

    Ion Implantation빈티지: 0조건: 중고마지막 검증일:어제
    AXCELIS NV GSD HE3

    AXCELIS

    NV GSD HE3

    Ion Implantation빈티지: 0조건: 중고마지막 검증일:어제