설명
설명 없음환경 설정
Item settings Standard/Optional Parameters Laser light source • 375 nm semi-guided laser (optional/dual light source (Exposure Source) Patterned solutions • Minimum feature size (CD): 0.45 ÿm • Writing grid size: 10nm Alignment System • 3 Camera Systems (Overview, Macro, Micro) (Alignment System) • Forward-facing (TSA) accuracy: ÿ 250 nm • Back alignment (BSA) accuracy: ÿ 500 nm Focal length control • Pressure-based real-time dynamic autofocus Ru Pneumatic Focus (Focus System) • Optical Focus Carriers and Automakers • Wafer size: 2 x 2 mm fragments, maximum 6 inches (150 mm) Chon (Substrate Handling) • Thickness range: 100 ÿm to 6 mm • Option: Autoloader Write speed • 100 x 100 mm area: < 10 min • 150 mm complete wafer: < 16 (Throughput) pointOEM 모델 설명
A maskless lithography tool with areas of application include nanofabrication of quantum devices (2D materials, semiconductor materials, nanowires, etc) MEMS, micro-optic elements, sensors, actuators, MOEMS and other devices for materials and life sciences.문서
카테고리
Lithography
마지막 검증일: 19일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
147466
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
HEIDELBERG INSTRUMENTS
MLA 150
카테고리
Lithography
마지막 검증일: 19일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
147466
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available