설명
EUV mask and mask blank reflectometer (EUV-MBR) Stand-alone EUV mask blank reflectometer Distinctive EUV-MBR properties • Wavelength accuracy better than 2 pm • Small Spot down to < 250 x 100 μm2 • 2000 spectral channels of 1.7 pm width. • Less than 20 seconds exposure time for measuring full spectrum at small spot with full resolution • Precision on CWL_50 < 1 pm • Precision on reflectivity: < 0.1% abs. • Accuracy on reflectivity: < 0.3 % abs. • Resolution limit on absorbers: < 0.1 % • Fiducial mark referenced positioning • Direct quantification of scatter and flare.환경 설정
Spectral range measured < 12.5 to > 14.5 nm Spectral Resolution ≈ 1.7 pm Measured spot size Typ. 250x100 μm2 -- Measured Signal dynamics > 12 bit ➔ From < 0.01 % to > 60% CWL_50 Av. Accuracy: ≤ 3 pm CWL_50 Precision, 3σ ≤ 1 pm Peak Reflectivity Av. Accuracy Rpeak ~ 65% ≤ 0.5 % absolute Peak Reflectivity Precision Rpeak ~ 65%, 3σ ≤ 0.5 %absolute Peak Reflectivity Av. Accuracy Rpeak ~ 1% ≤ 0.05 % absolute Peak Reflectivity : Precision Rpeak ~ 1%: ≤ 0.05%: , 3σ ≤ 0.02% absoluteOEM 모델 설명
Our flagship, the EUV-MBR is a stand alone tool for automated characterization of multilayers and absorbers of EUV masks and mask blanks based on our well.문서
문서 없음
카테고리
Lithography
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
70399
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
RESEARCH INSTRUMENTS
EUV MBR
카테고리
Lithography
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
70399
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
EUV mask and mask blank reflectometer (EUV-MBR) Stand-alone EUV mask blank reflectometer Distinctive EUV-MBR properties • Wavelength accuracy better than 2 pm • Small Spot down to < 250 x 100 μm2 • 2000 spectral channels of 1.7 pm width. • Less than 20 seconds exposure time for measuring full spectrum at small spot with full resolution • Precision on CWL_50 < 1 pm • Precision on reflectivity: < 0.1% abs. • Accuracy on reflectivity: < 0.3 % abs. • Resolution limit on absorbers: < 0.1 % • Fiducial mark referenced positioning • Direct quantification of scatter and flare.환경 설정
Spectral range measured < 12.5 to > 14.5 nm Spectral Resolution ≈ 1.7 pm Measured spot size Typ. 250x100 μm2 -- Measured Signal dynamics > 12 bit ➔ From < 0.01 % to > 60% CWL_50 Av. Accuracy: ≤ 3 pm CWL_50 Precision, 3σ ≤ 1 pm Peak Reflectivity Av. Accuracy Rpeak ~ 65% ≤ 0.5 % absolute Peak Reflectivity Precision Rpeak ~ 65%, 3σ ≤ 0.5 %absolute Peak Reflectivity Av. Accuracy Rpeak ~ 1% ≤ 0.05 % absolute Peak Reflectivity : Precision Rpeak ~ 1%: ≤ 0.05%: , 3σ ≤ 0.02% absoluteOEM 모델 설명
Our flagship, the EUV-MBR is a stand alone tool for automated characterization of multilayers and absorbers of EUV masks and mask blanks based on our well.문서
문서 없음