설명

Installed and running Equipment status: Operational. This machine GaN process. It can be used for both 4-inch and 6-inch wafers (previously used for 4-inch and now producing 6-inch). Only additional purchases of replacement hot plates and related accessories are required.

환경 설정

Previously, the GaN growth was on 4-inch wafers, now it's on 6-inch wafers, all in six pieces. Schematic and circuit data for the equipment. Equipment: Photos of the reaction chamber (upper, inside, and below), and gas source piping with equipment door open. Human-machine interface software version: EpiTT_TWO. PLC, SLC, and RF generator details.

OEM 모델 설명

The AIXTRON AIX 2800 G4 is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. This cutting-edge system is specifically designed for epitaxial growth of compound semiconductor materials, with a primary focus on producing high-performance optoelectronic devices like light-emitting diodes (LEDs) and laser diodes. Its precise and controlled growth process enables the creation of high-quality semiconductor layers, making it a crucial tool for manufacturing optoelectronic components used in various applications, including lighting, displays, telecommunications, and other high-performance electronic devices.