설명
설명 없음환경 설정
- 8X6 Configuration - Heated exhaust from chamber to filter assembly - Dual filter assembly Inverted and Phoniex filter - VAT Throttle Valve - Extra Pressure sensors for both exhaust streams (Hydride and CL2) - Internal scrubber switching - EPITT Version 2 - EPISON on Dopant MO line plus heating from bubbler to Run/Vent line - Ebara ESA100WN process pump - Two Triscroll pumps: for glovebox and Antechamber - Aixact version 7.6..2.1 - Process module 208VAC, RF Generator 480VAC - No transfer modulesOEM 모델 설명
The G5 series reactors typically feature AIXTRON's Planetary Reactor technology, which allows for high-quality, uniform growth of films. This is achieved by rotating the substrate wafers around a central point, similar to the planets orbiting the sun, while gases are injected into the chamber.문서
문서 없음
AIXTRON
AIX G5
검증됨
카테고리
MOCVD
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
117155
웨이퍼 사이즈:
알 수 없음
빈티지:
2014
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AIXTRON
AIX G5
카테고리
MOCVD
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
117155
웨이퍼 사이즈:
알 수 없음
빈티지:
2014
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
- 8X6 Configuration - Heated exhaust from chamber to filter assembly - Dual filter assembly Inverted and Phoniex filter - VAT Throttle Valve - Extra Pressure sensors for both exhaust streams (Hydride and CL2) - Internal scrubber switching - EPITT Version 2 - EPISON on Dopant MO line plus heating from bubbler to Run/Vent line - Ebara ESA100WN process pump - Two Triscroll pumps: for glovebox and Antechamber - Aixact version 7.6..2.1 - Process module 208VAC, RF Generator 480VAC - No transfer modulesOEM 모델 설명
The G5 series reactors typically feature AIXTRON's Planetary Reactor technology, which allows for high-quality, uniform growth of films. This is achieved by rotating the substrate wafers around a central point, similar to the planets orbiting the sun, while gases are injected into the chamber.문서
문서 없음