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설명 없음환경 설정
Type: GaN MOCVD Version: 2 INCH x 42, 4 INCH x 11, 6 INCH x 6 Capacity: 6"×6 or 4"×11 or 2"×24 Susceptor dimension: D520mm×T19mm Chamber coil (9 channels) Hydride Line : 1xNH3, 2xDopant Purifier: H2, N2, NH3 Pump : DOR pump(SH-110), Ebara pump(ESA70) With: H2 Purifier (IN LINE Type) Maker TERATECH Model TPH-LP-500S(100S) Gas: Hydrogen Process Methods: Line Purifier Flow Rate(Nm³/hr) : 10.30.50.75.100.150.300 Impurities Removed: H₂.O₂.H₂O.CO.CO₂OEM 모델 설명
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.문서
문서 없음
AIXTRON
AIX 2800 G4 HT
검증됨
카테고리
MOCVD
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
24142
웨이퍼 사이즈:
알 수 없음
빈티지:
2010
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Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AIXTRON
AIX 2800 G4 HT
검증됨
카테고리
MOCVD
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
24142
웨이퍼 사이즈:
알 수 없음
빈티지:
2010
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
Type: GaN MOCVD Version: 2 INCH x 42, 4 INCH x 11, 6 INCH x 6 Capacity: 6"×6 or 4"×11 or 2"×24 Susceptor dimension: D520mm×T19mm Chamber coil (9 channels) Hydride Line : 1xNH3, 2xDopant Purifier: H2, N2, NH3 Pump : DOR pump(SH-110), Ebara pump(ESA70) With: H2 Purifier (IN LINE Type) Maker TERATECH Model TPH-LP-500S(100S) Gas: Hydrogen Process Methods: Line Purifier Flow Rate(Nm³/hr) : 10.30.50.75.100.150.300 Impurities Removed: H₂.O₂.H₂O.CO.CO₂OEM 모델 설명
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.문서
문서 없음