설명
설명 없음환경 설정
Configured for InP System equipped with EpiTT Hydride/Dopant Lines : NH3 × 2, Si2H6 x 1 (with dilution), Si2H6 x 1 MO Source Lines : TMGa-1, TMGa-2, TEGa-1,TEGa-2, TMAI-1, Cp2Mg- 1, Cp2Mg-2, TMIn-1, TMIn-2. Equipped with (4) RM 6S and (2) RM 25S thermal bathsOEM 모델 설명
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.문서
문서 없음
카테고리
MOCVD
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
Deinstalled
제품 ID:
99356
웨이퍼 사이즈:
알 수 없음
빈티지:
2010
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
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AIXTRON
AIX 2800 G4 HT
카테고리
MOCVD
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
Deinstalled
제품 ID:
99356
웨이퍼 사이즈:
알 수 없음
빈티지:
2010
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
Configured for InP System equipped with EpiTT Hydride/Dopant Lines : NH3 × 2, Si2H6 x 1 (with dilution), Si2H6 x 1 MO Source Lines : TMGa-1, TMGa-2, TEGa-1,TEGa-2, TMAI-1, Cp2Mg- 1, Cp2Mg-2, TMIn-1, TMIn-2. Equipped with (4) RM 6S and (2) RM 25S thermal bathsOEM 모델 설명
The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.문서
문서 없음