설명
System with EFEM환경 설정
GaN MOCVDOEM 모델 설명
Veeco’s Propel™ MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2”, 3×4”, 1×6” and 1×8” on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.The system deposits high-quality GaN films for multiple applications such as power, RF, & photonics. The R200 reactor is based on Veeco’s leading TurboDisc® design including the IsoFlange™ and SymmHeat™ technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco D180, K465i™ or MaxBright™ systems to the Propel GaN MOCVD platform.문서
문서 없음
VEECO
Propel
카테고리
MOCVD
마지막 검증일: 14일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
146156
웨이퍼 사이즈:
12"/300mm
빈티지:
2020
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
System with EFEM환경 설정
GaN MOCVDOEM 모델 설명
Veeco’s Propel™ MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2”, 3×4”, 1×6” and 1×8” on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.The system deposits high-quality GaN films for multiple applications such as power, RF, & photonics. The R200 reactor is based on Veeco’s leading TurboDisc® design including the IsoFlange™ and SymmHeat™ technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco D180, K465i™ or MaxBright™ systems to the Propel GaN MOCVD platform.문서
문서 없음