설명
설명 없음환경 설정
Manual Loading / up to an 8" round substrate x 1.2" deep. (9.5" x 9.5" x 1") Typical Capacity: Can accommodate die or special devices through manual loading Chamber is 4",6",8" compatible Up to three (3) 8" wafers with a special holder Up to three (3) 6" wafers with a special holder (Heated) (0-10torr) Fully Integrated Inductively Coupled Downstream Plasma Source for surface modification and cleaning Includes Gate Valve Isolation of Plasma Source Electronic Mass Flow Controller for Plasma Source gas control - Oxygen 13.56MHzOEM 모델 설명
Molecular Vapor Deposition System문서
문서 없음
SPTS / APPLIED MICROSTRUCTURES
MVD 100
검증됨
카테고리
MVD
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
101796
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SPTS / APPLIED MICROSTRUCTURES
MVD 100
카테고리
MVD
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
101796
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
Manual Loading / up to an 8" round substrate x 1.2" deep. (9.5" x 9.5" x 1") Typical Capacity: Can accommodate die or special devices through manual loading Chamber is 4",6",8" compatible Up to three (3) 8" wafers with a special holder Up to three (3) 6" wafers with a special holder (Heated) (0-10torr) Fully Integrated Inductively Coupled Downstream Plasma Source for surface modification and cleaning Includes Gate Valve Isolation of Plasma Source Electronic Mass Flow Controller for Plasma Source gas control - Oxygen 13.56MHzOEM 모델 설명
Molecular Vapor Deposition System문서
문서 없음