설명
2CH환경 설정
환경 설정 없음OEM 모델 설명
The AMAT Centura DxZ is an advanced chemical vapor deposition (CVD) system tailored for advanced CMOS and MtM applications in the semiconductor industry, focusing on 150mm and 200mm wafer sizes. It excels in depositing ultra-thick oxides (≥20µm) and enables low-temperature processing (<200°C), making it ideal for high-performance devices. With its ability to produce conformal, low wet-etch-rate films and doped films with tunable refractive indices, the Centura DxZ offers versatility to meet diverse manufacturing demands. Its broad portfolio of processes includes TEOS, silane-based oxides, nitrides, low-k dielectrics, strain-engineered films, and litho-enabling films, providing semiconductor manufacturers with a comprehensive solution for optimal performance and efficiency in production processes.문서
문서 없음
APPLIED MATERIALS (AMAT)
CENTURA DxZ
검증됨
카테고리
PECVD
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
90424
웨이퍼 사이즈:
8"/200mm
빈티지:
1997
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
APPLIED MATERIALS (AMAT)
CENTURA DxZ
카테고리
PECVD
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
90424
웨이퍼 사이즈:
8"/200mm
빈티지:
1997
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
2CH환경 설정
환경 설정 없음OEM 모델 설명
The AMAT Centura DxZ is an advanced chemical vapor deposition (CVD) system tailored for advanced CMOS and MtM applications in the semiconductor industry, focusing on 150mm and 200mm wafer sizes. It excels in depositing ultra-thick oxides (≥20µm) and enables low-temperature processing (<200°C), making it ideal for high-performance devices. With its ability to produce conformal, low wet-etch-rate films and doped films with tunable refractive indices, the Centura DxZ offers versatility to meet diverse manufacturing demands. Its broad portfolio of processes includes TEOS, silane-based oxides, nitrides, low-k dielectrics, strain-engineered films, and litho-enabling films, providing semiconductor manufacturers with a comprehensive solution for optimal performance and efficiency in production processes.문서
문서 없음